2SB1325_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

www.kexin.com.cn 1 Transistors PNP Transistors 2SB1325 ■ Features

  • Contains diode between collector and emitter.
  • Low saturation voltage.
  • Large current capacity.
  • Complementary to 2SD1999 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 Collector - Emitter Voltage VCEO -20 Emitter - Base Voltage VEBO -6 Collector Current - Continuous IC -4 Collector Current - Pulse ICP -6 Collector Power Dissipation PC 1.5 W Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -25 Collector- emitter breakdown voltage VCEO Ic= -10 mA， RBE=∞ -20 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -6 Collector-base cut-off current ICBO VCB= -20 V , IE=0 -1 Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-3 A, IB=-150mA -0.25 -0.5 Base - emitter saturation voltage VBE(sat) IC=-3 A, IB=-150mA -1.5 hFE(1) VCE= -2V, IC= -500mA 70 hFE(2) VCE=- 2V, IC= -3 A 50 Base-to-Emitter Resistance RBE 1.5 kΩ Diode Forwad Voltage VF IF=500mA 1.5 V Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz 60 pF Transition frequency fT VCE= -2V, IC= -500mA 300 MHz DC current gain V uA V ■ Marking Marking BM RBE Base Collector Emitter

www.kexin.com.cn2 Transistors PNP Transistors 2SB1325 ■ Typical Characterisitics Collector Current, IC -- A 0.01 0.1 C Ta=25 bC --25 C 2SB1325 IC / IB=20 0.11.0 2 3 5 7 5753 2 3 VCE(sat) -- IC Collector Current, IC -- A 0.01 0.11.0 2 3 5 7 5753 2 3 VBE(sat) -- IC 2SB1325 IC / IB=20 75 C --25 C Ta=25 C Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V b b b b b Cob -- VCB Collector-to-Base Voltage, VCB -- V Output Capacitance, Cob -- pF 10 2 3 5 72 3 5 72 3 5 7 1001.00.1 100 2SB1325 f=1MHz hFE -- IC DC Current Gain, hFE Collector Current, IC -- A 0.01 0.1 1.07 2 3 5 7 2 3 5 7 2 3 5 2SB1325 VCE=2V --25 bC

25 CTa=75

C b b Collector-to-Emitter Voltage, VCE -- V A S O Collector Current, IC -- A 0.11.0 2 3 5 7 102 3 5 7 2 3 1.0 0.1 0.01 Ambient Temperature, Ta -- C PC -- Ta Collector Dissipation, PC -- W 5710 1.8 25 50 75 100 125 150 1.6 1.5 1.4 1.2 1.0 0.8 0.6 0.4 0.2 ICP=6A IC=4A 10ms 1ms DC operation 100ms 2SB1325 Mounted on a ceramic board(250mm 2•0.8mm) 2SB1325 Ta=25 C Single pulse Mounted on a ceramic board(250mm 2• 0.8mm) (For PNP, minus sign is omitted) b b