2SB1323_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
www.kexin.com.cn 1 Transistors PNP Transistors 2SB1323 ■ Features
- Contains diode between collector and emitter.
- Low saturation voltage.
- Large current capacity.
- Complementary to 2SD1997 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -30 Emitter - Base Voltage VEBO -6 Collector Current - Continuous IC -3 Collector Current - Pulse ICP -5 Collector Power Dissipation PC 1.5 W Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -40 Collector- emitter breakdown voltage VCEO Ic= -10 mA， RBE=∞ -30 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -6 Collector-base cut-off current ICBO VCB= -35 V , IE=0 -1 Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-1 A, IB=-50mA -0.18 -0.4 Base - emitter saturation voltage VBE(sat) IC=-1 A, IB=-50mA -1.2 Base - emitter on voltage VBE(on) VCE= -2V, IC= -1 A -1 -5 hFE(1) VCE= -2V, IC= -500mA 70 hFE(2) VCE=- 2V, IC= -2 A 50 Base-to-Emitter Resistance RBE 0.8 kΩ Base Resistance R1 120 200 Ω Diode Forwad Voltage VF IF=500mA 1.5 V Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz 55 pF Transition frequency fT VCE= -5V, IC= -500mA 150 MHz DC current gain V uA V ■ Marking Marking BK
www.kexin.com.cn2 Transistors PNP Transistors 2SB1323 ■ Typical Characterisitics