2SB1323 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

Features

  • Contains input resistance(R,), base-to-emitter resistance(Rgg). - Contains diode between collector and emitter. - Low saturation voltage - Large current capacity - Small-sized package making it easy to provide high-density, small-sized hybrid ICs ( ):2SB1323 Absolute Maximum Ratings at Ta= 25°C unit Collector to Base Voltage Vcso (~)40 v Collector to Emitter Voltage Voro (-)30 Vv Emitter to Base Voltage Vso (-)6 Vv Collector Current Io (-)3 A Collector Current(Pulse) Icp {~)5 A Collector Dissipation Pc (Mounted on ceramic board 250mm2X0.8mm) 1.5 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55to+150 °C Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current — Iopo Vop=(—)30V,Ig=0 (-)L0 9 pA DC Current Gain hpg(1) Vor =(—)2V,I¢=(-)0.5A 70 hpg(2) Vog=(-)2V,Io=(—)2A 50 Gain-Bandwidth Product fy Vor =(—)2V,Ig=(-)0.5A 100 MHz Output Capacitance Cob Vop=(-)10V,f=1MHz (55)40 pF C-E Saturation Voltage Vorisat) Ig=(—)1A,Igp=(—)50mA 0.12 0.3 Vv (—0.18) (—0.4) B-E ON-State Voltage VBEWON) Vor=(—)2V,Ic=(—)1A (-)l (-)2 (-)5 Vv C-B Breakdown Voltage Visryoso = Ig =(—)10pA,Ig=0 (—)40 Vv C-E Breakdown Voltage — Vigrycgo(1) Io=(—)10nA,Rpg= © (—)40 v Vieryceo(2) I¢=(—)10mA,Rgp= © (—)30 v Diode Forward Voltage Vr 1p=0.5A 1.5 v Base to Emitter Resistance Rar 0.8 kQ Base Resistance Ry 120 160 200 Q Marki 2SB1323 : BK . ang oSbieoe :DO Package Dimensions 2038 (unit : mm) 45 us. Electrical Connection ; piss] Collector Collector | | im T “Rk be lard oth | Rt arn] mea i (} Ed x ath Re REE 3.0 0.4 4 doo E: Emitter EnStier Emitter C: Collector B: Base PNP NPN SANYO: PCP Bottom View) SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 6089MO,TS No.3129-1/3

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eee Tat =1000 10 i) 1000 Collector Current,lc — mA Collector Current,Ic — mA No.3129-2/3

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wd | | 2SB1323/28D1997 1d—1 Na Fg Pt | ' 4 Ne eq | 0% a 4 %e, | ¢ Ne, { § +10 Se, zy | | SDT A 4, 2 2 3 <8, © Ie, ffty yes. 0 a a Ambient Temperature,Ta — °C 1H No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. W Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Aoccept full responsibility and indemnity and defend SANYO ELECTRIC CO., LTD, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. @ Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. _ _ $$ No.3129-3/3