2SB1321A PANASONIC

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

Silicon PNP epitaxial planer type For general amplification Complementary to 2SD1992A I Features

  • Large collector power dissipation P C (600 mW)
  • Allowing supply with the radial taping I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector to base voltage V CBO −60 V Collector to emitter voltage V CEO −50 V Emitter to base voltage V EBO −7V Peak collector current I CP −1A Collector current I C −500 mA Collector power dissipation P C 600 mW Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C Parameter Symbol Conditions Min Typ Max Unit Collector cutoff current I CBO VCB = −20 V, IE = 0 − 0.1 µA ICEO VCE = −20 V, IB = 0 −1 µA Collector to base voltage V CBO IC = −10 µA, IE = 0 −60 V Collector to emitter voltage V CEO IC = −2 mA, IB = 0 −50 V Emitter to base voltage V EBO IE = −10 µA, IC = 0 −7V Forward current transfer ratio *1 hFE1 *2 VCE = −10 V, IC = −10 mA 85 340 hFE2 VCE = −10 V, IC = −500 mA 40 Collector to emitter saturation voltage V CE(sat) IC = −300 mA, IB = −30 mA − 0.35 − 0.6 V Transition frequency f T VCB = −10 V, IE = 10 mA, f = 200 MHz 200 MHz Collector output capacitance C ob VCB = −10 V, IE = 0, f = 1 MHz 6 15 pF I Electrical Characteristics Ta = 25°C ± 3°C Unit: mm 6.9±0.1 1.05 ±0.05 2.5±0.1 3.5±0.114.5±0.5 (1.45) 0.80.7 4.0 0.15 0.85 0.8 1.0 0.65 max. 0.45 +0.1 −0.05 0.45 +0.1 −0.05 2.5±0.5 2.5 ±0.5 2.5±0.1 123 1.2±0.1 0.65max. 0.45 0.1 0.05 (HW Type) Note) In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1: Emitter 2: Collector 3: Base MT1 Type Package Rank Q R S No-rank hFE1 85 to 170 120 to 240 170 to 340 85 to 340 Note) *1: Pulse measurement *2: Rank classification Product of no-rank is not classified and have no indication for rank.

PC  Ta IC  VCE IC  IB VCE(sat)  IC VBE(sat)  IC hFE  IC fT  IE Cob  VCB VCER  RBE 0 160 40 120 80 14020 100 60 200 600 400 800 100 500 300 700 Ambient temperature Ta (°C) Collector power dissipation PC (mW) −1 200 −1 000 −800 −600 −400 −200 −9 mA −8 mA −7 mA −6 mA −5 mA −4 mA −3 mA −2 mA −1 mA IB = −10 mA Collector to emitter voltage VCE (V) Collector current IC (mA) Ta = 25°C −800 −700 −600 −500 −400 −300 −200 −100 Base current IB (mA) Collector current IC (mA) VCE = −10 V Ta = 25°C −10 −30 −100 −1 −3 −10 Ta = 75°C 25°C −25°C Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (A) IC / IB = 10 − 0.01 − 0.03 − 0.01 − 0.03 − 0.1 − 0.3 − 0.1 − 0.3 −10 −30 −100 −1 −3 −10 Ta = −25°C 75°C 25°C Base to emitter saturation voltage VBE(sat) (V) Collector current IC (A) IC / IB = 10 − 0.01 − 0.03 − 0.1 − 0.3 600 500 400 300 200 100 −1 −3 −10 Ta = 75°C 25°C −25°C Forward current transfer ratio hFE VCE = −10 V Collector current IC (A) 1 3 10 30 10022 0 55 0 240 200 160 120 220 180 140 100 Transition frequency fT (MHz) Emitter current IE (mA) VCB = −10 V Ta = 25°C Collector output capacitance Cob (pF) Collector to base voltage VCB (V) IE = 0 f = 1 MHz Ta = 25°C 13 10 30 100 300 1 000 −120 −100 −80 −60 −40 −20 Collector to emitter voltage VCER (V) Base to emitter resistance RBE (kΩ) IC = −2 mA Ta = 25°C

ICEO  Ta 102 103 104 Ambient temperature Ta (°C) 0 200 1601208040 180 1401006020 VCE = −10 V ICEO (Ta) ICEO (Ta = 25°C)