Download PDF2SB1320A PANASONIC
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Technical content
Silicon PNP epitaxial planer type For general amplification Complementary to 2SD1991A I Features
- High forward current transfer ratio h FE
- Allowing supply with the radial taping I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector to base voltage V CBO −60 V Collector to emitter voltage V CEO −50 V Emitter to base voltage V EBO −7V Peak collector current I CP −200 mA Collector current I C −100 mA Collector power dissipation P C 400 mW Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C Parameter Symbol Conditions Min Typ Max Unit Collector cutoff current I CBO VCB = −20 V, IE = 0 −1 µA ICEO VCE = −20 V, IB = 0 −1 µA Collector to base voltage V CBO IC = −10 µA, IE = 0 −60 V Collector to emitter voltage V CEO IC = −2 mA, IB = 0 −50 V Emitter to base voltage V EBO IE = −10 µA, IC = 0 −7V Forward current transfer ratio * hFE VCE = −10 V, IC = −2 mA 160 460 Collector to emitter saturation voltage V CE(sat) IC = −100 mA, IB = −10 mA −1V Transition frequency f T VCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz Collector output capacitance C ob VCB = −10 V, IE = 0, f = 1 MHz 3.5 pF I Electrical Characteristics Ta = 25°C ± 3°C Note) *: Rank classification Unit: mm 6.9±0.1 1.05 ±0.05 2.5±0.1 3.5±0.114.5±0.5 (1.45) 0.80.7 4.0 0.15 0.85 0.8 1.0 0.65 max. 0.45 +0.1 −0.05 0.45 +0.1 −0.05 2.5±0.5 2.5 ±0.5 2.5±0.1 123 1.2±0.1 0.65max. 0.45 0.1 0.05 (HW Type) Note) In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1: Emitter 2: Collector 3: Base MT1 Type Package Rank Q R S No-rank hFE 160 to 260 210 to 340 290 to 460 160 to 460 Product of no-rank is not classified and have no indication for rank.
PC Ta IC VCE IC IB IB VBE IC VBE VCE(sat) IC hFE IC fT IE Cob VCB 0 160 40 120 80 14020 100 60 100 200 300 400 500 Ambient temperature Ta (°C) Collector power dissipation PC (mW) −120 −100 −80 −60 −40 −20 −250 µA −200 µA −150 µA −100 µA −50 µA IB = −300 µA Collector to emitter voltage VCE (V) Collector current IC (mA) Ta = 25°C 0 −100 −200 −300 −400 −60 −50 −40 −30 −20 −10 Base current IB (µA) Collector current IC (mA) VCE = −5 V Ta = 25°C Base current IB (µA) −400 −350 −300 −250 −200 −150 −100 −50 Base to emitter voltage VBE (V) VCE = −5 V Ta = 25°C 0 −2.0−1.6−1.2 −240 −200 −160 −120 −80 −40 Ta = 75°C −25°C 25°C Collector current IC (mA) − 0.4 − 0.8 Base to emitter voltage VBE (V) VCE = −5 V − 0.001 − 0.003 −1 −3 −10 25°C −25°C Ta = 75°C − 0.01 − 0.03 − 0.1 − 0.3 Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (mA) IC / IB = 10 −1 −3 600 500 400 300 200 100 Ta = 75°C 25°C −25°C Forward current transfer ratio hFE VCE = −5 V Collector current IC (mA) 0.1 0.3 1 3 10 30 100 160 140 120 100 Transition frequency fT (MHz) Emitter current IE (mA) VCB = −10 V Ta = 25°C Collector output capacitance Cob (pF) Collector to base voltage VCB (V) IE = 0 f = 1 MHz Ta = 25°C
Cre VCE NF IE NF IE h Parameter IE h Parameter VCB ICBO Ta Common emitter reverse transfer capacitance Cre (pF) Collector to emitter voltage VCE (V) IE = 1 mA f = 10.7 MHz Ta = 25°C Noise figure NF (dB) Emitter current IE (mA) VCB = −5 V f = 1 kHz Rg = 2 kΩ Ta = 25°C Noise figure NF (dB) Emitter current IE (mA) VCB = −5 V Rg = 50 kΩ Ta = 25°C f = 100 Hz 10 kHz 1 kHz 100 200 300 h Parameter hfe hoe (µS) hie (kΩ) hre (×10−4) Emitter current IE (mA) VCB = −5 V f = 270 Hz Ta = 25°C 100 200 300 hfe hoe (µS) hie (kΩ) hre (×10−4) h Parameter Collector to vase voltage VCB (V) IE = −2 mA f = 270 Hz Ta = 25°C 100 ICBO (Ta) ICBO (Ta = 25°C) Ambient temperature Ta (°C) 0 150 7525 12550 100 VCB = −10 V