2SB1319 PANASONIC

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Technical content

Silicon PNP epitaxial planer type For low-frequency power amplification n Features l Low collector to emitter saturation voltage VCE(sat). l Large collector current IC . l M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Base 2:Collector EIAJ:SC–71 3:Emitter M Type Mold Package 6.9–0.1 1.0–0.1 1.0 2.5–0.1 1.0 1.5 1.5 R0.9 R0.9 R0.7 0.4 0.85 4.1–0.2 4.5 –0.1 2.5 2.5 123Symbol V CBO V CEO V EBO ICP IC PC * Tj Tstg Ratings –30 –20 150 –55 ~ +150 Unit V V V A A W n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Symbol I CBO IEBO V CEO V EBO hFE *1 V CE(sat) fT C ob Conditions V CB = –10V, IE = 0 V EB = –5V , IC = 0 IC = –1mA, IB = 0 IE = –10mA, IC = 0 V CE = –2V , IC = –2A*2 IC = –3A, IB = –0.1A*2 V CB = –6V , IE = 50mA, f = 200MHz V CB = –20V , IE = 0, f = 1MHz min –20 typ 120 max –100 625 Unit nA mA V V V MHz pF *1hFE Rank classification Rank P Q R hFE 90 ~ 135 120 ~ 205 180 ~ 625 *2 Pulse measurement * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion

0 160 40 120 80 14020 100 60 1.6 1.2 0.4 1.0 1.4 0.8 0.2 0.6 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ambient temperature Ta (˚C) Collector power dissipation PC (W ) Ta=25˚C –45mA –40mA –35mA –30mA –25mA –20mA –15mA –10mA –5mA IB=–50mA Collector to emitter voltage VCE (V) Collector current IC (A) –12 –10 VCE =–2V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (A) 600 500 400 300 200 100 VCE =–2V Ta=75˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC /IB=30 Ta=75˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 1 10 100 10003 30 300 240 200 160 120 VCB =–6V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) 300 250 200 150 100 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) PC — Ta I C — V CE IC — V BE hFE — IC V CE(sat) — IC fT — IE C ob — V CB