2SB1317 NJSEMI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 2SB1317

DESCRIPTION

  • Good Linearity of hFE
  • Wide Area of Safe Operation
  • High DC Current-Gain Bandwidth Product
  • Complement to Type 2SD1975 ''

APPLICATIONS

  • High power amplification
  • Optimum for the output stage of a Hi-Fi audio amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) FIH 1 Base

2 Collector

3 Emitter

Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ Ta=25'C Collector Power Dissipation @ TC=25"C Junction Temperature Storage Temperature Range VALUE -180 -180 -15 -25 3.5 150 150 -55-150 UNIT V V V A A W \\ » - B •• -H R ..I? f DIM A B r D E F H K N P Q R ij mm WIN 25.50 19.80 4.50 0.90 2.ao 2,40 10.30 3,10 0.50 20,00 3,90 2,40 3,10 1.90 3.90 W | 2,90 MAX 26.50 20.20 5.50 1.1 0 3..20 2.60 111.00 3.30 0.70 21,00 4.50 2,60 3,50 j.SG 4,10 3.J5 - C -• N.I Semi-Coudiietors reserves the right to change test conditions, parameter limits and package dimensions \\\\ithout notice. Information turnished hy N.I Semi-Conductors is believed to he both accurate and reliable at the tim ' lo press. I louever. N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Soini-Conductois encourages customers lo verify that datasheets are current before placing orders. Quality Semi-Conductors

Silicon PNP Power Transistor 2SB1317

ELECTRICAL CHARACTERISTICS

Tc=25°C unless otherwise specified SYMBOL VcE(sat) VBEIOII) ICBO IEBO hFE-i hpE-2 hFE-3 COB fy PARAMETER Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Output Capacitance Current-Gain — Bandwidth Product CONDITIONS IC=-10A; IB=-1A lc= -8A ; VCE= -5V VCB=-180V; IE=0 VEB= -3V; lc= 0 lc= -20mA ; VCE= -5V lc=-1A;VCE=-5V lc= -8A ; VCE= -5V lE=0;VcB=-10V;ftest= 1.0MHz lc= -0.5A;VCE= -5V;f,est= 1 .0MHz MIN TYP. 450 MAX -2.5 -1.8 -50 -50 200 UNIT V V M A u A PF MHz Classifications Q 60-120 S 80-160 P 100-200