2SB1317 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1317
DESCRIPTION
- With TO-3PL package
- Complement to type 2SD1975
- Wide area of safe operation
- High transition frequency fT
- Optimum for the output stage of a Hi-Fi audio amplifier
APPLICATIONS
- For high power amplification PINNING PIN DESCRIPTION
1 Emitter
2 Collector;connected to
3 Base
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -180 V VCEO Collector-emitter voltage Open base -180 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -15 A ICM Collector current-peak -25 A Ta=25℃ 3.5 PC Collector power dissipation TC=25℃ 150 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-3PL) and symbol
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1317 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage I C=-10A ;IB=-1A -2.5 V VBE Base-emitter on voltage I C=-8A ; VCE=-5V -1.8 V ICBO Collector cut-off current V CB=-180V; IE=0 -50 μA IEBO Emitter cut-off current V EB=-3V; IC=0 -50 μA hFE-1 DC current gain I C=-20mA ; VCE=-5V 20 hFE-2 DC current gain I C=-1A ; VCE=-5V 60 200 hFE-3 DC current gain I C=-8A ; VCE=-5V 20 fT Transition frequency I C=-0.5A ; VCE=-5V;f=1MHz 20 MHz COB Collector output capacitance I E=0;f=1MHz;VCB=-10V 450 pF hFE-2 classifications Q S P 60-120 80-160 100-200
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1317 PACKAGE OUTLINE F i g . 2 O u t l i n e d i m e n s i o n s ( u n i n d i c a t e d t o l e r a n c e :±0.50 mm)
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1317