2SB1317 PANASONIC
Document overview
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Technical content
Unit: mm 1:Base 2:Collector 3:Emitter TOP–3L Package 20.0–0.5 6.010.0 26.0–0.520.0–0.5 1.52.5 Solder Dip 10.9–0.5 123 2.0–0.3 3.0–0.3 1.0–0.2 5.0–0.3 3.0 4.02.0 5.45–0.3 0.6–0.2 1.5 2.7–0.3 1.5 2.0 f 3.3–0.2 3.0 2SB1317 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1975 n Features l Satisfactory foward current transfer ratio hFE vs. collector cur- rent IC characteristics l Wide area of safe operation (ASO) l High transition frequency fT l Optimum for the output stage of a HiFi audio amplifier n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings –180 –180 –25 –15 150 3.5 150 –55 to +150 Unit V V V A A W n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO IEBO hFE1 hFE2 * hFE3 V BE V CE(sat) fT C ob Conditions V CB = –180V , IE = 0 V EB = –3V , IC = 0 V CE = –5V , IC = –20mA V CE = –5V , IC = –1A V CE = –5V , IC = –8A V CE = –5V , IC = –8A IC = –10A, IB = –1A V CE = –5V , IC = – 0.5A, f = 1MHz V CB = –10V , IE = 0, f = 1MHz min typ 450 max –50 –50 200 –1.8 –2.5 Unit mA mA V V MHz pF TC =25°C Ta=25°C *hFE2 Rank classification Rank Q S P hFE2 60 to 120 80 to 160 100 to 200
PC —T a I C —V CE IC —V BE V CE(sat)—I C hFE —I C fT —I C C ob —V CB Area of safe operation (ASO) 0 160 40 120 80 14020 100 60 200 150 100 (1) TC =Ta (2) With a 100 · 100 · 2mm Al heat sink (3) Without heat sink (PC =3.5W) (1) (2) (3) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) –24 –20 –16 –12 TC =25˚C –800mA –700mA –600mA –500mA –400mA –300mA –200mA –150mA –100mA –50mA IB=–1000mA Collector to emitter voltage VCE (V) Collector current IC (A) 0– 4 –1 –3 –2 –24 –18 –12 VCE =–5V 25˚C TC =–25˚C 100˚C Base to emitter voltage VBE (V) Collector current IC (A) – 0.01 –10 – 0.1 – 0.03 – 0.3 IC /IB=10 25˚C –25˚CTC =100˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 1000 100 300 VCE =–5V TC =100˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 1000 100 300 VCE =–10V f=1MHz T C =25˚C Collector current IC (A) Transition frequency fT (MHz ) 10000 1000 100 300 3000 IE=0 f=1MHz T C =25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 t=10ms 100ms ICP IC Non repetitive pulse TC =25˚C DC Collector to emitter voltage VCE (V) Collector current IC (A)
R th(t)—t 10–4 1010–3 10–110–2 11 0 3102 104 0.1 100 10000 1000 (1) (2) Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V · 0.2A (2W) and without heat sink (2) PT=10V · 1.0A (10W) and with a 100 · 100 · 2mm Al heat sink Time t (s) Thermal resistance Rth(t) (˚C/W)