2SB1315 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
, {J nc, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SB1315
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min)
- Good Linearity of hFE
- Complement to Type 2SD1977
APPLICATIONS
- Audio frequency power amplifier applications
- Recommend for 45-55W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ Ta=25 C Collector Power Dissipation @ Tc=25 C Junction Temperature Storage Temperature Range VALUE -120 -120 -12 3.5 150 -55-150 UNIT V V V A A W FIM:l Base
2 Collector
3 Emitter
, -« B — *" r *. Y - -*. --L -- D DIM A B r D F Q K K L N U R S If Y mm MIN 19.90 15.75 5.50 0.90 3,30 2.90 5.90 0.595 21.10 1,90 10.30 490 3.75 3,20 9.90' A20 1.90 MAX 20.10 16.10 5.70 1,10 3.50 3.20 6.10 0,70 22,50 2,25 11.00 5.10 3.95 3, 'SO 10,10 4,90 2.10 NJ Seiiii-Cooductors reserves the right to change test conditions, parameter limits and package dimensions \\vithout notice. Information furnished by NJ Semi-Conductors is believed to he hoth accurate and reliable at the time of L-.oiim to press. I lo\\\\ever, NJ Semi-Conductors assumes no responsibility for ;my errors or omissions discovered in its use. N.I Semi-Condiiclors encoura.ues customers to \\erify thai datasheets are airrenl before placitm orders. Qualihy Semi-Conductors
Silicon PNP Power Transistor 2SB1315
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified SYMBOL VcE(sat) VsE(sat) ICBO IEBO h-FE-i hFE-2 COB PARAMETER Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance CONDITIONS lc= -5.0A; IB= -0.5A lc= -5.0A; IB= -0.5A VCB=-120V; IE=0 VEB= -5V; lc=0 lc= -50mA; VCE= -5V IC=-1A;VCE=-5V lE=0;VcB=-10V;ftest= 1.0MHz MIN TYP. 200 MAX -1.5 -2.0 -50 -50 320 UNIT V V MA H A PF
- hFE_2 Classifications M 60-120 L 100-200 K 160-320