2SB1315 SAVANTIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1315
DESCRIPTION
- With TO-3PML package
- Low collector saturation voltage
APPLICATIONS
- For use in low frequency power amplifier applications PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector-emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -8 A Ta=25 3.5 PC Collector dissipation TC=25 65 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-3PML) and symbol
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1315 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-50mA ;IB=0 -120 V V(BR)EBO Emitter-base breakdown voltage I E=-1mA ;IC=0 -5 V VCEsat Collector-emitter saturation voltage I C=-5A ;IB=-0.5A -1.5 V VBEsat Base-emitter saturation voltage I C=-5A ;IB=-0.5A -2.0 V ICBO Collector cut-off current V CB=-120V; IE=0 -50 µA IEBO Emitter cut-off current V EB=-5V; IC=0 -50 µA hFE DC current gain I C=-1A ; VCE=-5V 60 320 fT Transition frequency I C=-1A ; VCE=-5V 65 MHz COB Collector output capacitance f=1MHz;V CB=-10V 200 pF
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1315 PACKAGE OUTLINE Fig.2 outline dimensions