2SB1302_15 KEXIN

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  • Manufacturer or author: Provided By digicamel.com
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Technical content

www.kexin.com.cn 1 Transistors PNP Transistors 2SB1302 ■ Features

  • Low collector-to-emitter saturation voltage.
  • Large current capacity.
  • Fast switching speed. 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 Collector - Emitter Voltage VCEO -20 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -5 Collector Current - Pulse ICP -8 Collector Power Dissipation PC 1.3 W Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 uA， IE=0 -25 Collector- emitter breakdown voltage VCEO Ic= -1 mA, RBE=∞ -20 Emitter - base breakdown voltage VEBO IE= -100 uA， IC=0 -5 Collector-base cut-off current ICBO VCB= -20V , IE=0 -0.5 Emitter cut-off current IEBO VEB= -4V , IC=0 -0.5 Collector-emitter saturation voltage VCE(sat) IC=-3 A, IB=-60 mA -0.25 -0.5 Base - emitter saturation voltage VBE(sat) IC=-6 A, IB=-60 mA -1 -1.3 VCE= -2V, IC= -500 mA 100 400 VCE= -2V, IC= -4 A 60 Turn-ON Time ton 40 Storage Time tstg 200 Fall Time tf 10 Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz 60 pF Transition frequency fT VCE= -5V, IC= -200 mA 320 MHz See specified Test Circuit. ns V uA V DC current gain hFE ■ Classification of hfe(1) Type 2SB1302-R 2SB1302-S 2SB1302-T Range 100-200 140-280 200-400 Marking BJ R* BJ S* BJ T*

www.kexin.com.cn2 Transistors PNP Transistors 2SB1302 tiucriC tseT emiT gnihctiwS VR RB VCC= --10VVBE=5V + + 50Ω INPUT OUTPUT RL 100μF 470μF PW=20μs IB1 D.C.≤1% IB2 IC=10IB1= --10IB2= --2A ■ Typical Characterisitics IC -- VCE Collector Current, IC -- A Collector-to-Emitter Voltage, VCE -- V IC -- VCE Collector Current, IC -- A Collector-to-Emitter Voltage, VCE -- V IC -- VBE Base-to-Emitter Voltage, VBE -- V Collector Current, IC -- A hFE -- IC Collector Current, IC -- A DC Current Gain, hFE --4 --5 --3 --2 --1 --6 VCE= --2V VCE= --2V --1 --2 --3 --4 --5 IB=0mA --40mA --30mA --20mA --10mA 100 1000 Ta=75°C 25°C --25°C --50mA 2--0 4--1-- 5--3-- --1 --2 --3 --4 --5 IB=0mA --40mA --30mA --25mA --15mA --35mA --20mA --10mA --5mA Ta=75 --25 From top --100mA --90mA --80mA --70mA --60mA

www.kexin.com.cn 3 Tran sistors PNP Transistors 2SB1302 ■ Typical Characterisitics VCE(sat) -- IC Collector Current, IC -- A Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV fT -- IC Collector Current, IC -- A Gain-Brandwidth Product, fT -- MHz Cob -- VCB Collector-to-Base Voltage, VCB -- V Output Capacitance, Cob -- pF VBE(sat) -- IC Collector Current, IC -- A Base-to-Emitter Saturation Voltage, VBE(sat) -- V 5 --0.1 2--0.01 32 753 7 77 --1.0 2 3 5 --10 --10 --100 --1000 --1.0 --10 IC / IB=50 100 1000 7 --10 2 3--1.0 2 3 53 75 100 VCE= --5V f=1MHz Ta= --25°C 25°C 75°C IC / IB=50 Ta= --25°C 25°C 75°C PC -- TaA S O Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- A Ambient Temperature, Ta -- °C Collector Dissipation, PC -- W 10ms1ms --1.0 2 23 52 3 5 377 --10 --1.0 --10 --0.1 DC operation 100ms Ta=25°C Single pulse 0 20 40 60 80 100 120 140 1600 0.2 0.4 0.6 0.8 1.2 1.4 1.8 1.0 Mounted on a ceramic board (250mm2 0.8mm) ICP= --8A IC= --5A Mounted on a ceramic board (250mm 0.8mm)