2SB1293 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
, O ne.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SB1293
DESCRIPTION
- High Collector Current:: lc= -5A
- Low Collector Saturation Voltage : VCE(satr -1.0V(Max)@lc= -3A
- Wide Area of Safe Operation
- Complement to Type 2SD1896
APPLICATIONS
- Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL VCBO VCEO VEBO Ic 'CM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Total Power Dissipation @ Tc=25'C Junction Temperature Storage Temperature Range VALUE -100 -100 -10 150 -55-150 UNIT V V V A A W
- 'X jit q \\-\\ FIH: 1 B»e ! 2 Collector
3 Emitter
**Q U I T I - B M H -* V *! •' P -•- * H H * 1 K ' 1 I H < T cT i r y>D t i "' " i DIM A B c D F G H j K L Q R S J V mm MIN 15,50 9.90 4.20 0.70 3.40 2.68 0.44 13.00 1.10 2.70 2.30 1.29 6.45 8.66 MAX 15.90 10.20 i.5Q 0.90 3.70 5.18 2.90 ^60 13.40 1.45 2.90 2.70 1.35 6.65 8.86 - S »r* J RK N.I Seini-CHiiiliictors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by N.I Semi-Conduetors is believed to he both accurate and reliable at the time ofgoi to press. I louever, N,l Semi-Condiietors ussunios no rosponsibilil) for an> errors or omissions discovered in its use N.I Senn-C onductors eneourages customers to \\erity that datasheets are current before placing orders. Quality Semi-Conductors
Silicon PNP Power Transistor 2SB1293
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat) VeE(sat) ICBO IEBO HFE COB ft PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Output Capacitance Current-Gain—Bandwidth Product CONDITIONS lc=-1mA; IB= 0 lc= -50u A; IE= 0 IE= -50M A; lc= 0 lc= -3A; IB= -0.3A |c= -3A; IB= -0.3A VCB=-100V; IE=0 VEB= -4V; lc= 0 ' lc=-1A;VCE=-5V |E=0;VCB=-10V;f= 1MHz IE= 0.5A; VCE= -5V MIN -100 -100 TYP. 120 MAX -1-0 -1.5 -10 -10 320 UNIT V V V V V MA u A PF MHz Classifications D 60-120 E 100-200 F 160-320