2SB1293 SAVANTIC
Document overview
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- PDF pages: 3
Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1293
DESCRIPTION
- With TO-220C package
- Low collector saturation voltage
- Complement to type 2SD1896
- Wide area of safe operation
APPLICATIONS
- For use in low frequency power amplifier applications,power drivers and DC-DC converters PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector -emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -5 A ICM Collector current-peak -10 A PC Collector power dissipation T C=25 40 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-220) and symbol
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1293 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-1mA; IB=0 -100 V V(BR)CBO Collector-base breakdown voltage IC=-50µA; IE=0 -100 V V(BR)EBO Emitter-base breakdown voltage IE=-50µA; IC=0 -5 V VCEsat Collector-emitter saturation voltage I C=-3A ;IB=-0.3A -1.0 V VBEsat Base-emitter saturation voltage I C=-3A ;IB=-0.3A -1.5 V ICBO Collector cut-off current V CB=-100V; IE=0 -10 µA IEBO Emitter cut-off current V EB=-4V; IC=0 -10 µA hFE DC current gain I C=-1A ; VCE=-5V 60 320 fT Transition frequency I E=-0.5A ; VCE=-5V 12 MHz COB Output capacitance I E=0 ; VCB=-10V;f=1MHz 120 pF hFE Classifications D E F 60-120 100-200 160-320
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1293 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.10 mm)