2SB1293 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1293
DESCRIPTION
- High Collector Current:: IC= -5A
- Low Collector Saturation Voltage : V CE(sat)= -1.0V(Max)@IC= -3A
- Wide Area of Safe Operation
- Complement to Type 2SD1896
APPLICATIONS
- Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -10 A PC Total Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1293
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 B -100 V V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 -100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -50μA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A B -1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -0.3A B -1.5 V ICBO Collector Cutoff Current VCB= -100V; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -10 μA hFE DC Current Gain IC= -1A; VCE= -5V 60 320 COB Output Capacitance IE=0; VCB= -10V; f= 1MHz 120 pF fT Current-Gain—Bandwidth Product IE= 0.5A; VCE= -5V 12 MHz hFE Classifications D E F 60-120 100-200 160-320 isc Website：www.iscsemi.cn 2