2SB1292 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1292 DESCRIPTION ·
- With TO-220Fa package
- Low saturation voltage
- Complement to type 2SD1832
- Excellent DC current gain characteristics
- Wide area of safe operation
APPLICATIONS
- For use in low frequency power amplifier applications,power drivers and DC-DC converters PINNING PIN DESCRIPTION
1 Emitter
2 Collector
3 Base
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -5 A ICM Collector current-Peak -10 A TC=25℃ 30 PC Collector power dissipation Ta=25℃ 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1292 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-1mA , IB=0 -60 V V(BR)CBO Collector-base breakdown voltage I C=-50μA , IE=0 -60 V V(BR)EBO Emitter-base breakdown voltage I E=-50μA , IC=0 -5 V VCEsat Collector-emitter saturation voltage I C=-3A ;IB=-0.3A -1.5 V VBEsat Base-emitter saturation voltage I C=-3A ;IB=-0.3A -1.5 V ICBO Collector cut-off current V CB=-60V ;IE=0 -10 μA IEBO Emitter cut-off current V EB=-4V; IC=0 -10 μA hFE DC current gain I C=-1A ; VCE=-5V 100 320 fT Transition frequency I C=-0.5A ; VCE=-5V 12 MHz Cob Output capacitance I E=0 ; VCB=-10V ,f=1MHz 150 pF hFE Classifications E F 100-200 160-320
Inchange Semiconductor Product Specification Silicon Power Transistors 2SB1292 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)