2SB1275_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
www.kexin.com.cn 1 Transistors PNP Transistors 2SB1275 ■ Features
- High voltage : VCEO= -160V
- Suitable for Middle Power Driver
- Complementary to 2SD1918 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 1.50 +0.15 -0.15 0.80+0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.152.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3.80 TO-252 Unit: mm
1 Base
2 Collector
3 Emitter
■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -160 Collector - Emitter Voltage VCEO -160 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -1.5 Collector Current - Pulse ICP -3 Collector Power Dissipation Tc = 25°C 10 Ta = 25°C 1 Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 PC W V A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 uA， IE=0 -160 Collector- emitter breakdown voltage VCEO Ic= -1 mA, RBE=∞ -160 Emitter - base breakdown voltage VEBO IE= -100 uA， IC=0 -5 Collector-base cut-off current ICBO VCB= -120V , IE=0 -1 Emitter cut-off current IEBO VEB= -4V , IC=0 -1 Collector-emitter saturation voltage VCE(sat) IC=-1 A, IB=-100 mA -2 Base - emitter saturation voltage VBE(sat) IC=-1 A, IB=-100 mA -1.2 DC current gain hFE VCE= -5V, IC= -100 mA 82 180 Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz 30 pF Transition frequency fT VCE= -5V, IE= 100 mA,f=30MHz 50 MHz V uA V ■ Classification of hfe Type 2SB1275-P Range 82-180
www.kexin.com.cn2 Transistors PNP Transistors 2SB1275 ■ Typical Characterisitics Fig.1 Ground Emitter Propagation Characteristics COLLECTOR CURRENT : IC [A] BASE TO EMITTER VOLTAGE : VBE [V] Fig.2 Typical Output Characteristics COLLECTOR CURRENT : IC [A] COLECTOR TO EMITTE VOLTAGE : VCE [V] Fig.3 DC Current Gain vs. Collector Current(I) DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC [A] Fig.4 DC current gain vs. output current (II) DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC [A] -10 -100 -1000 -10000 -0 -0.5 -1 -1.5 VCE= ̺5V Pulsed Ta=100ºC 25ºC ̺25ºC
www.kexin.com.cn 3 Tran sistors PNP Transistors 2SB1275 ■ Typical Characterisitics Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current (I) COLLECTOR-EMITTER SATURATION VOLTAGE : VCE(sat) [V] COLLECTOR CURRENT : IC [A] Fig.6 Collector-Emitter Saturation Voltage vs. Collector Current (II) COLLECTOR-EMITTER SATURATION VOLTAGE : VCE(sat) [V] COLLECTOR CURRENT : IC [A] Fig.7 Base-Emitter Saturation Voltage vs. Collector Current BASE-EMITTER SATURATION VOLTAGE : VBE(sat) [V] COLLECTOR CURRENT : IC [A] Fig.8 Gain Bandwidth Product vs. Emitter Current TRANSITION FREQUENCY : fT [MHz] EMITTER CURRENT :IE [mA]
www.kexin.com.cn4 Tran sistors PNP Transistors 2SB1275 ■ Typical Characterisitics Fig.9 Collector output capacitance vs. Collector-Base Voltage COLLECTOR OUTPUT CAPACITANCE : Cob [pF] COLLECTOR - BASE VOLTAGE : VCB [V] Fig.10 Safe Operating Area COLLECTOR CURRENT : IC [A] COLLECTOR TO EMITTER VOLTAGE : VCE [V] Ta=25ºC *Single non repetitive pulse