2SB1275 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconPNPPowerTransistor 2SB1275
DESCRIPTION
- Suitableformiddlepower drivers
- High voltage:VCEO=-160V
- ComplementaryNPNtypes:2SD1918
- 100% avalanche tested
- Minimum Lot-to-Lotvariationsforrobustdevice performanceandreliable operation
APPLICATIONS
- Motordrivers,LEDdriver,Powersupply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage -160 V VCEO Collector-EmitterVoltage -160 V VEBO Emitter-BaseVoltage -5 V IC CollectorCurrent-Continuous -1.5 A ICM CollectorCurrent-Peak -3.0 A PC CollectorPowerDissipation @TC=25℃ 10 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconPNPPowerTransistor 2SB1275 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BVCBO Collector-Basebreakdownvoltage IC=-50uA -160 V BVCEO Collector-Emitterbreakdownvoltage IC=-1mA -160 V BVEBO Emitter-Basebreakdownvoltage IE=-50uA -6 V VCE(sat) Collector-EmitterSaturationVoltage IC=-1A;IB=-100mA -2.0 V ICBO CollectorCutoffCurrent VCB=-120V;IE=0 -1.0 μA IEBO EmitterCutoffCurrent VEB=-4V;IC=0 -1.0 μA hFE DCCurrentGain IC=-0.1A;VCE=-5V 82 180 COB OutputCapacitance IE=0;VCB=-10V;f=1.0MHz 30 pF fTNOTE Current-Gain—BandwidthProduct IC=-0.1A;VCE=-10V,f=100MHz 50 MHz NOTE:Pulsed hFE Classifications P 82-180