2SB1273 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
zii£u , Li ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SB1273
DESCRIPTION
- High Reliability
- Low Collector Saturation Voltage :VcE(Satr-1.0V(Max)@lc=-2A
- Wide Area of Safe Operation
APPLICATIONS
- Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25r) SYMBOL VCBO VCEO VEBO Ic ICM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Total Power Dissipation @ Ta=25'C Total Power Dissipation @ TC=25'C Junction Temperature Storage Temperature Range VALUE -60 -60 1.75 150 -55-150 UNIT V V V A A W c HP PIN: 1 Base ; 2 Collector
3 Emitter
~ " TO-220C package U i I--.fi; K T C~l *-i of- S j """1 DtW A B r D F h K L a R s V mm M1N 15,50 9.90 4.20 0.70 3.40 4.98 2.68 0.44 13.00 1.10 2.70 2.30 1.29 6.45 8.66 MAX 15.90 10.20 L, 50 0.90 3.70 5.18 2.90 0.30 13.40 1.45 2.90 2.70 1.35 6.65 8.86 r — . N.I Semi-Conductors reserves the right to ehange test conditions, parameter limits and package dimensions uithotit notice. Information furnished by NJ Semi-Conductors is believed 10 be both accurate and reliable at the time of yum" In press, llouevcr, N.I Semi-Conductors assumes no responsibility lor any errors or omissions discovered in its use. N.I Semi-Conductors encourages customers to verify that data.shects are current before placing orders. Quality Semi-Conductors
Silicon PNP Power Transistor 2SB1273
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat) VeE(on) ICBO IEBO hpE-1 hpE-2 COB fj PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance Current-Gain—Bandwidth Product CONDITIONS lc= -5mA; RBE= ro lc=-1mA; le=0 lE=-1mA; lc= 0 lc= -2A; IB= -0.2A lc= -0.5A; VCE= -5V VCB= -40V; IE= 0 VEB= -4V; lc= 0 lc= -0.5A; VCE= -5V lc= -3A; VCE= -5V |E=0;VCB=-10V;f= 1MHz lc= -0-5A; VCE= -5V MIN -60 -60 TYP. 100 MAX -1.0 -1.0 -0.1 -0.1 280 UNIT V V V V V mA mA PF MHz
- hpE-1 Classifications Q 70-140 R 100-200 S 140-280