2SB1273 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1273
DESCRIPTION
- With TO-220 package
- Low collector saturation voltage
APPLICATIONS
- Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION
1 Emitter
2 Collector;connected to
3 Base
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -3 A ICM Collector current-peak -8 A PC Collector power dissipation TC=25℃ 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-220) and symbol
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1273 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-5mA ,RBE=∞ -60 V V(BR)CBO Collector-base breakdown voltage I C=-1mA ,IE=0 -60 V V(BR)EBO Emitter-base breakdown voltage I E=-1mA ,IC=0 -6 V VCEsat Collector-emitter saturation voltage I C=-2A; IB=-0.2A -0.4 -1.0 V VBE Base-emitter on voltage I C=-0.5A ; VCE=-5V -0.8 -1.0 V ICBO Collector cut-off current V CB=-40V; IE=0 -100 μA IEBO Emitter cut-off current V EB=-4V; IC=0 -100 μA hFE-1 DC current gain I C=-0.5A ; VCE=-5V 70 280 hFE-2 DC current gain I C=-3A ; VCE=-5V 20 COB Output capacitance I E=0 ; VCB=-10V,f=1MHz 60 pF fT Transition frequency I C=-0.5A ; VCE=-5V 100 MHz hFE-1 Classifications Q R S 70-140 100-200 140-280
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1273 PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)