2SB1272 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1272 DESCRIPTION ·
- With TO-126 package
- DARLINGTON
- High DC current gain
APPLICATIONS
- For low frequency power amplifier
1 Emitter
2 Collector;connected to
3 Base
Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter -base voltage Open collector -7 V IC Collector current -2 A PC Collector power dissipation TC=25℃ 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1272 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA;IB=0 B -100 V V(BR)CBO Collector-base breakdown voltage IC=-1mA; IE=0 -100 V V(BR)EBO Emitter-base breakdown voltage IE=-5mA;IC=0 -7 V VCEsat Collector-emitter saturation voltage IC=-2A; IB=-2mA -2.0 V VBEsat Base-emitter saturation voltage IC=-2A; IB=-2mA -2.5 V ICBO Collector cut-off current VCB=100V; IE=0 -0.1 mA ICEO Collector cut-off current VCE=100V; IB=0 -0.5 mA IEBO Emitter cut-off current VEB=-7V; IC=0 -5.0 mA hFE DC current gain IC=-1A ; VCE=-2V 1000 10000
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1272 PACKAGE OUTLINE Fig.2 Outline dimensions