2SB1266_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
www.kexin.com.cn 1 Tran sistors PNP Transistors 2SB1266 ■ Features
- Suitable for sets whose height is restricted
- Complementary to 2SD1902 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 1.50 +0.15 -0.15 0.80+0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.152.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3.80 TO-252 Unit: mm
1 Base
2 Collector
3 Emitter
■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -60 Emitter - Base Voltage VEBO -6 Collector Current - Continuous IC -3 Collector Current - Pulse ICP -8 Collector Power Dissipation Tc = 25°C 30 Ta = 25°C 1.65 Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 PC W V A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -1 mA， IE=0 -60 Collector- emitter breakdown voltage VCEO Ic= -5 mA, RBE=∞ -60 Emitter - base breakdown voltage VEBO IE= -1 mA， IC=0 -6 Collector-base cut-off current ICBO VCB= -50V , IE=0 -100 Emitter cut-off current IEBO VEB= -5V , IC=0 -100 Collector-emitter saturation voltage VCE(sat) IC=-2 A, IB=-200 mA -0.4 -1 Base - emitter saturation voltage VBE(sat) IC=-2 A, IB=-200 mA -1.2 Base - emitter voltage VBE VCE= -5V, IC= -500 mA -1 VCE= -5V, IC= -500 mA 70 280 VCE= -5V, IC= -3 A 20 Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz 60 pF Transition frequency fT VCE= -5V, IC= -500 mA 8 MHz DC current gain hFE V V uA ■ Classification of hfe(1) Type 2SB1266-Q 2SB1266-R 2SB1266-S Range 70-140 100-200 140-280
www.kexin.com.cn2 Transistors PNP Transistors 2SB1266 ■ Typical Characterisitics
www.kexin.com.cn 3 Tran sistors PNP Transistors 2SB1266 ■ Typical Characterisitics