2SB1261-Z_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
www.kexin.com.cn 1 Tran sistors PNP Transistors 2SB1261-Z ■ Features
- High hFE hFE = 100 to 400
- Low VCE(sat) VCE(sat) ≤ 0.3 V 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 1.50 +0.15 -0.15 0.80+0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.152.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3.80 TO-252 Unit: mm
1 Base
2 Collector
3 Emitter
■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -60 Emitter - Base Voltage VEBO -7 Collector Current - Continuous IC -3 Collector Current - Pulse ICP -5 Base Current IB -0.5 Collector Power Dissipation Tc = 25°C 10 Ta = 25°C 2 Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 PC W V A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -60 Collector- emitter breakdown voltage VCEO Ic= -1 mA, IB=0 -60 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -7 Collector-base cut-off current ICBO VCB= -60V , IE=0 -10 Emitter cut-off current IEBO VEB= -7V , IC=0 -10 Collector-emitter saturation voltage VCE(sat) IC=-1.5 A, IB=-150 mA -0.2 -0.3 Base - emitter saturation voltage VBE(sat) IC=-1.5 A, IB=-150 mA -0.94 -1.2 VCE= -2V, IC= -200 mA 60 VCE= -2V, IC= -600 mA 100 400 VCE= -2V, IC= -2 A 50 Turn-on time ton 0.15 0.5 Storage time tstg 0.5 2 Fall time tf 0.1 0.5 Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz 40 pF Transition frequency fT VCE= -5V, IE= 1.5 A 50 MHz Ic=-1A,Vcc=-10V,RL=10Ω, IB1=-IB2=-0.1A us V V uA DC current gain hFE ■ Classification of hfe(2) Type 2SB1261-Z-M 2SB1261-Z-L 2SB1261-Z-K Range 100-200 160-320 200-400
www.kexin.com.cn2 Transistors PNP Transistors 2SB1261-Z ■ Typical Characterisitics
www.kexin.com.cn 3 Tran sistors PNP Transistors 2SB1261-Z ■ Typical Characterisitics