2SB1259 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
JEIIEU ^zmi-L-onciiLctoi :-Pioauct±, One.. c/ <y 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Darlington Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SB1259
DESCRIPTION
- High DC Current Gain- : hFE= 2000(Min)@ (VCE= -4V, lc= -5A)
- Large Current Capability
- Complement to Type 2SD2081
APPLICATIONS
- Driver for solenoid,relay and motor and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Base Current-Continuous Collector Power Dissipation @TC=25"C Junction Temperature Storage Temperature VALUE -120 -120 -10 -15 150 -55-150 UNIT V V V A A A W FIH: 1 TO-220 '' <* X — *- =•-' Is Base Collector Emitter F package B F I - • - - o - C -
- s- Q H K J . . DIM A B r D F H J K L N Q R i U mm WIN 14.95 10.00 4.40 0.75 3.10 3.70 0.50 13.4 1.10 5.00 2.70 2.20 2.65 6.40 MAX 15.05 10.10 4.60 0.90 3.30 3.90 0.70 1 3.6 1.30 5.20 2.90 2.40 2.85 6.60 A NJ Semi-Conductors reserves the right U> change test conditions, parameter limits and package dimensions uilhout notice. Inrbnvmtion furnished by NJ Semi-Conductors is believed to he holh accurate and reliable at the time of goiiu lo press. I linvever. NJ Semi-Conductors assumes no responsibility for an> errors or omissions discovered in its use. " N.I Semi-('ondiiclors enuuira.sies customers to verily that datasheets are current before placing orders. Quality Semi-Conductors
Silicon PNP Darlington Power Transistor 2SB1259
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified SYMBOL V(BR)CEO VcE(sat) VsE(sat) ICBO IEBO hFE COB PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Output Capacitance CONDITIONS lc=-10mA; IB= 0 lc=-5A; lB=-10mA lc=-5A; lB=-10mA VCB=-120V; IE=0 VEB= -6V; lc= 0 lc= -5A; VCE= -4V lE=0;VcB=-10V;ftest= 1.0MHz MIN -120 2000 TYP. 145 MAX -1-5 -2.0 -10 -10 UNIT V V V u A mA PF Switching Times ton tstg tf Turn-on Time Storage Time Fall Time lc= -3A, IB1= -\\B2= -6mA, VCc=-30V;RL= 10O 0.6 1.6 0.5 u s u s M s