2SB1259 SANKEN
Document overview
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Technical content
ø3.3±0.2 10.1±0.2 4.0±0.2 16.9±0.313.0min 8.4±0.2 0.8±0.2 3.9 ±0.2 2.542.54 1.35±0.15 0.85+0.2 -0.1 1.35±0.15 2.2±0.2 4.2±0.2 2.8 c0.5 2.4±0.20.45+0.2 -0.1 BE C a b Symbol VCBO VCEO VEBO IC IB PC Tj T stg Ratings –120 –120 –10( Pulse–15) 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W n Absolute maximum ratings n Electrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Ratings –10max –10max –120min 2000min –1.5max –2.0max 100typ 145typ Unit mA mA V V V MHz pF Conditions VCB=–120V VEB=–6V IC=–10mA VCE=–4V, IC=–5A IC=–5A, IB=–10mA IC=–5A, IB=–10mA VCE=–12V, IE=0.2A VCB=–10V, f=1MHz Darlington 2SB1259 (Ta=25°C) (Ta=25°C) External Dimensions FM20(TO220F) Silicon PNP Epitaxial Planar Transistor(Complement to type 2SD2081) Application : Driver for Solenoid, Relay and Motor and General Purpose Weight : Approx 2.0g a. Part No. b. Lot No. IC –V CE Characteristics (Typical) h FE –IC Characteristics (Typical) h FE –IC Temperature Characteristics (Typical) θj-a–t Characteristics IC –V BE Temperature Characteristics (Typical)V CE (sat)–IB Characteristics (Typical) Pc –Ta Derating –10 –15 Collector-Emitter Voltage VCE (V) Collector Current IC (A) –50mA –10mA –5mA –3mA –2mA IB =–1mA –20mA Safe Operating Area (Single Pulse)fT –IE Characteristics (Typical) Base Current IB (mA) Collector-Emitter Saturation Voltage VCE(sat) (V) –1A –5A IC =–10A Collector Current IC (A) DC Current Gain h FE (VCE =–4V) 100 500 10000 5000 1000 20000 Typ 0.3 0.5 1 10 100 1000 Time t(ms) Transient Thermal Resistance θj-a(˚C/W) –0.03 –0.05 –0.5 –0.1 –10 –20 Collector-Emitter Voltage VCE (V) Collector Current IC (A) DC 100 µs10ms 1ms Without Heatsink Natural Cooling 00 25 50 75 100 125 150 Ambient Temperature Ta(˚C) Maximum Power Dissipation P C (W) 50x50x2 100x100x2 150x150x2 With Infinite heatsink Without Heatsink –10 0 –2.2 –2–1 Base-Emittor Voltage V BE (V) Collector Current IC (A) (VCE =–4V) 125˚C (Case Temp)25˚C (Case Temp) –30˚C (Case Temp) (VCE =–4V) 100 5000 500 1000 20000 10000 Collector Current IC (A) DC Current Gain h FE 25˚C –30˚C 125˚C 0.05 0.1 0.5 1 5 10 100 200Cut-off Frequency fT (MH Z ) (VCE =–12V) Emitter Current IE (A) Typ Natural Cooling Silicone Grease Heatsink: Aluminum in mm n Typical Switching Characteristics (Common Emitter) VCC (V) –30 RL (Ω ) IC (A) VBB2 (V) IB2 (mA) ton (ms) 0.6typ tstg (ms) 1.6typ tf (ms) 0.5typ IB1 (mA) VBB1 (V) –10 B C E(3kΩ )(100Ω ) Equivalent circuit