2SB1253 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
, (i nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Darlington Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SB1253
DESCRIPTION
- High DC Current Gain- : hFE= 5000(Min)@lc= -5A
- Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@lc= -5A
- Complement to Type 2SD1893
APPLICATIONS
- Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBC VCEO VEBO Ic ICM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ Tc=25 C Collector Power Dissipation @ Ta=25 C' Junction Temperature Storage Temperature Range VALUE -130 -110 -10 150 -55-150 UNIT V V V A A W '(' O — PIN i : 2 < <~t 0 3 1.BASE 2. COLLECT OR TC-JPFa package i A " A K T - -B-"*- >Y+ -*• **-[ DIM A B r D F K K L H U R S T U -•»- C -*• S •* r mm WIN 20,70 14,70 4.SO 0,90 3..20 3,70 0,50 16,40 1,9ft 110,30 6,60 1.80 3.10 S.70 0.55 MAX 21.30 15,30 5,20 1,10 3,40 4,30 0.70 17.00 2.10 11,00 6,00 2,20 3.50 9,30 0,75 i — R N.I Seiiii-Coodiictors reserves the right to change tost conditions, parameter limits and package dimensions \\vithout notice. Information furnished by N.I Semi-Conductors is believed to he holh accurate and reliable at the lime of going NJ Semi-C'ondticiors encourages customers to verity that datasheets are current before placing orders. Quality 5emi-Conductors
Silicon PNP Darlington Power Transistor 2SB1253
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified SYMBOL V(BR)CEO VcE(sat) VsEfsat) ICBO ICEO IEBO hpE-1 hlFE-2 fr PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage., Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= -30mA; IB= 0 lc= -5A; IB= -5mA lc= -5A; !B= -5mA VCB=-130V; IE=0 VCE=-110V; IB= 0 VEB= -5V; lc= 0 IC=-1A;VCE=-5V lc= -5A; VCE= -5V IC=-0.5A;VCE=-10V MIN -110 2000 5000 TYP. MAX -2.5 -3.0 -100 -100 -100 30000 UNIT V V V MA M A M A MHz Switching Times ton Utg tf Turn-on Time Storage Time Fall Time lc= -5A; lBi= -\\B2= -5mA, Vcc -50V, 0.9 2.5 1.7 M s M s M s
- hFE-2 Classifications Q 5000-15000 P 8000-30000