2SB1253_17 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 isc SiliconPNPDarlingtonPowerTransistor 2SB1253
DESCRIPTION
- HighDCCurrentGain- :hFE=5000(Min)@IC=-5A
- Low-CollectorSaturationVoltage- :VCE(sat)=-2.5V(Max.)@IC=-5A
- ComplementtoType 2SD1893
- MinimumLot-to-Lotvariations forrobustdevice performance andreliable operation
APPLICATIONS
- Designedforpower amplifierapplications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage -130 V VCEO Collector-EmitterVoltage -110 V VEBO Emitter-BaseVoltage -5 V IC CollectorCurrent-Continuous -6 A ICM CollectorCurrent-Peak -10 A PC CollectorPowerDissipation @TC=25℃ 50 W CollectorPowerDissipation @Ta=25℃ 3 TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 isc SiliconPNPDarlingtonPowerTransistor 2SB1253 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=-30mA;IB=0 -110 V VCE(sat) Collector-EmitterSaturationVoltage IC=-5A;IB=-5mA -2.5 V VBE(sat) Base-EmitterSaturationVoltage IC=-5A;IB=-5mA -3.0 V ICBO CollectorCutoffCurrent VCB=-130V;IE=0 -100 μA ICEO CollectorCutoffCurrent VCE=-110V;IB=0 -100 μA IEBO EmitterCutoffCurrent VEB=-5V;IC=0 -100 μA hFE-1 DCCurrentGain IC=-1A;VCE=-5V 2000 hFE-2 DCCurrentGain IC=-5A;VCE=-5V 5000 30000 fT Current-Gain—BandwidthProduct IC=-0.5A;VCE=-10V 20 MHz SwitchingTimes ton Turn-onTime IC=-5A;IB1=-IB2=-5mA, VCC= -50V, 0.9 μs tstg StorageTime 2.5 μs tf FallTime 1.7 μs hFE-2 Classifications Q P 5000-15000 8000-30000