2SB1231 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
LW Je.iie.ij , Li na. 20 STERNAVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor TELEPHONE: (973) 376-2922 fc',2) 227-6005 FAX (373)376-8960 2SB1231
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(Bfi)Cto=-100V(Min)
- High Current Capability
- Wide Area of Safe Operation
- Complement to Type 2SD1841
APPLICATIONS
- Designed for motor drivers, converters and other general High-current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=2S'C) SYMBOL VCBO VCEO V, u-, Ic ICP le c Tv Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse . Base Current-Continuous Collector Power Dissipation @ Td=25 C Collector Power Dissipation @Tc=25f Junction Temperature Storage Temperature Range VALUE -110 -100 -25 -40 120 150 -55-150 UNIT V V V A A A C 13 53 to •:•? O 0:1 ~l 3 333
Silicon PNP Power Transistor 2SB1231
ELECTRICAL CHARACTERISTICS
Tc-25'C unless otherwise specified hFE! Classifications P 50-100 Q 70-140 SYMBOL VfBRlCEO V<3RjCBO V;BR,EBO Vc£(sat) VRMsall ICBO IF BO hpF-i riFt-2 PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base -Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS lc= -5mA; RHE=<" lc=-1mA; !E=O lE=-1mA; lc= 0 IC=-10A, IB=-1A lc=-10A: IB=-1A VCB=-100V;'lE=0 VEB= -5V, lc= 0 lc= -2.5A; VCE= -2V IC=-10A; Vce=-2V MIN -100 -110 TYP. MAX -1.5 -100 -100 140 UNIT V V V V V M A pA