2SB1231 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 isc SiliconPNPPowerTransistor 2SB1231
DESCRIPTION
- Collector-EmitterBreakdown Voltage- :V(BR)CEO=-100V(Min)
- HighCurrentCapability
- WideArea ofSafeOperation
- ComplementtoType 2SD1841
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
APPLICATIONS
- Designedformotordrivers,converters andothergeneral High-currentswitching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage -110 V VCEO Collector-EmitterVoltage -100 V VEBO Emitter-BaseVoltage -6 V IC CollectorCurrent-Continuous -25 A ICP CollectorCurrent-Pulse -40 A IB BaseCurrent-Continuous -8 A PC CollectorPowerDissipation @Ta=25℃ 3 W CollectorPowerDissipation @TC=25℃ 120 TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 isc SiliconPNPPowerTransistor 2SB1231 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=-5mA;RBE=∞ -100 V V(BR)CBO Collector-BaseBreakdown Voltage IC=-1mA;IE=0 -110 V V(BR)EBO Emitter-BaseBreakdownVoltage IE=-1mA;IC=0 -6 V VCE(sat) Collector-EmitterSaturationVoltage IC=-10A;IB=-1A -0.8 V VBE(sat) Base-EmitterSaturationVoltage IC=-10A;IB=-1A -1.5 V ICBO CollectorCutoffCurrent VCB=-100V;IE=0 -100 μA IEBO EmitterCutoffCurrent VEB=-5V;IC=0 -100 μA hFE-1 DCCurrentGain IC=-2.5A;VCE=-2V 50 140 hFE-2 DCCurrentGain IC=-10A;VCE=-2V 20 hFE-1 Classifications P Q 50-100 70-140