2SD1835-D SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 5

Technical content

Features

  • Adoption of FBET, MBIT processes.
  • Large current capacity.
  • Low collector-to-emitter saturation voltage.
  • Fast switching time. Electrical Characteristics at Ta = 25˚C 1 : Emitter 2 : Collector 3 : Base SANYO : NP retemaraPl obmySs noitidnoC sgnitaR tinU nimp ytx am tnerruCffotuCrotcelloCI OBC V BC I,V05)–(= E 0=0 01)–(A n tnerruCffotuCrettimEI OBE V BE I,V4)–(= C 0=0 01)–(A n niaGtnerruCCD h EF 1V EC I,V2)–(= C Am001)–(=* 001* 065 h EF 2V EC I,V2)–(= C A5.1)–(=0 4 tcudorPhtdiwdnaB-niaGf T V EC I,V01)–(= C Am05)–(=0 51z HM ecnaticapaCtuptuOC bo V BC zHM1=f,V01)–(=) 22(21F p egatloVnoitarutaSrettimE-ot-rotcelloCV )tas(EC IC I,A1)–(= B Am05)–(= 51.04 .0V )3.0–() 7.0–(V 5.0 4.0 0.5 0.6 2.0 14.0 5.0 0.45 0.45 4.0 0.44 1.31.3 123 Continued on next page.

No.2158–2/5 retemaraPl obmySs noitidnoC sgnitaR tinU nimp ytx am egatloVnoitarutaSrettimE-ot-esaBV )tas(EB IC I,A1)–(= B Am05)–(=9 .0)–(2 .1)–(V egatloVnwodkaerBesaB-ot-rotcelloCV OBC)RB( IC I,Aµ01)–(= E 0=0 6)–(V egatloVnwodkaerBrettimE-ot-rotcelloCV OEC)RB( IC R,Am1)–(= EB =∞ 05)–(V egatloVnwodkaerBesaB-ot-rettimEV OBE)RB( IE I,Aµ01)–(= C 0=6 )–(V emITNO-nruTt no tiucriCtseTdeificepseeS) 06(06s n emiTegarotSt gts tiucriCtseTdeificepseeS 055s n )054(s n emiTllaFt f tiucriCtseTdeificepseeS 03s n 03s n Switching Time Test Circuit * : The 2SB1229/2SD1835 are classified by 100mA hFE as follows : knaRR S T U h EF 002ot0010 82ot0410 04ot0020 65ot082 Continued from preceding page. VR R B VCCVBE = --5V + + 50Ω INPUT OUTPUT R L 100µF 470 µF IB1 IB2 IC =10IB1= --10IB2=500mA, VCC =25V (For PNP , the polarity is reversed.) ITR09360 IC -- VCE --0.4 --0.8 --1.2 --1.6 --2.0 --2.4 IB =0 --20mA ITR09361 IC -- VCE 0.4 0.8 1.2 1.6 2.0 2.4 IB =0 2SB1229 50mA 25mA 40mA 2SD1835 15mA 8mA ITR09362 IC -- VCE --200 --400 --600 --800 --1000 --1200 IB =0 --7mA --6mA --5mA --4mA --3mA --2mA --1mA ITR09363 IC -- VCE 04 28 61 2 10 200 400 600 800 1000 1200 IB =0 2SB1229 7mA 5mA 4mA 3mA 2mA 1mA 6mA 2SD1835 --50mA --10mA --8mA --6mA --4mA --2mA 4mA 2mA Collector Current, IC –A Collector-to-Emitter Voltage, VCE –V Collector Current, IC –A Collector-to-Emitter Voltage, VCE –V Collector Current, IC –m A Collector-to-Emitter Voltage, VCE –V Collector Current, IC –m A Collector-to-Emitter Voltage, VCE –V

No.2158–3/5 ITR09366 hFE -- IC 100 1000 ITR09367 hFE -- IC 0.01 323 5 0.1 1.0 5777 23 2 100 1000 2SB1229 V CE = --2V 2SD1835 V CE =2V 2SD1835 V CE =10V 100 ITR09370 Cob -- VCB 1.0 10 223 3 57 10057 100 ITR09371 Cob -- VCB ITR09364 IC -- VBE --0.8 --0.4 --1.2 --2.4 --2.0 --1.6 2SB1229 V CE = --2V ITR09365 IC -- VBE 0.4 0.8 1.2 1.6 2.0 2.4 2SD1835 V CE =2V Ta=75 --25 Ta=75 --25 3--10 7 --100523 7 --1000523 2 100 1000 fT -- IC 2SB1229 V CE =10V 2SB1229 f=1MHz 2SD1835 1MHz ITR09368 310 7 100523 7 1000523 2 100 1000 fT -- IC ITR09369 Ta=75°C 25°C --25°C Ta=75°C 25°C --25°C Collector Current, IC –A Base-to-Emitter Voltage, VBE –V Collector Current, IC –A Base-to-Emitter Voltage, VBE –V DC Current Gain, hFE Collector Current, IC –A DC Current Gain, hFE Collector Current, IC –A Collector Current, IC –m A Gain-Bandwidth Product, fT – MHz Collector Current, IC –m A Gain-Bandwidth Product, fT – MHz Output Capacitance, Cob -- pF Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Collector-to-Base V oltage, VCB -- V

No.2158–4/5 0 20 40 60 80 100 120 140 1600 200 400 800 750 1000 600 PC -- Ta ITR09377 2SB1229 / 2SD1835 ITR09372 VCE (sat) -- IC --10 --100 --1000 ITR09375 VBE (sat) -- IC 577 7 0.1 20.01 23 5 1.032 3 1.0 ITR09373 VCE (sat) -- IC 5 0.1 20.01 23 35 7 77 1.0 23 100 1000 ITR09374 VBE (sat) -- IC --1.0 --10 ITR09376 A S O 1.0 2 233 55 777 35 10 100 0.1 1.0 0.01 2SB1229 IC / IB =20 2SD1835 IC / IB =20 2SD1835 IC / IB =20 10ms 1ms ICP =3A IC =2A DC operation100ms 2SB1229 / 2SD1835 Ta=75°C 25°C --25°C 2SB1229 IC / IB =20 Ta= --25°C 25°C 75°C Ta= --25°C 25°C 75°C Ta=75°C 25°C --25°C Ta=25°C Single pulse (For PNP, minus sign is omitted.) Collector-to-Emitter Saturation Voltage, VCE (sat) – mV Collector Current, IC – A Collector Current, I C –A Collector-to-Emitter Saturation Voltage, VCE (sat) – mV Base-to-Emitter Saturation Voltage, VBE (sat) – V Collector Current, IC –A Base-to-Emitter Saturation Voltage, VBE (sat) – V Collector Current, IC –A Collector-to-Emitter Voltage, VCE –V Collector Current, IC –A Collector Dissipation, PC –m W Ambient Temperature, Ta – ˚C

Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2003. Specifications and information herein are subject to change without notice. 2SB1229/2SD1835 PS No.2158–5/5