2SB1220 KEXIN
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Technical content
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High collector-emitter voltage VCEO Low noise voltage NV Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO -150 V Collector-emitter voltage V CEO -150 V Emitter-base voltage V EBO -5 V Peak collector current I CP -100 mA Collector current I C -50 mA Collector power dissipation P C 150 mW Junction temperature T j 150 Storage temperature T stg - 5 5t o+ 1 5 0 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-emitter voltage V CEO IC = -100 ìA, IB = 0 -150 V Emitter-base voltage V EBO IE =- 1 0ì A ,IC =0 - 5 V Collector-base cutoff current I CBO VCB = -100 V, IE =0 - 1 ì A Forward current transfer ratio h FE VCE =- 5V ,IC = -10 mA 130 450 Collector-emitter saturation voltage V CE(sat) IC =- 3 0m A ,IB =- 3m A - 1 V Transition frequency f T VCB =- 1 0V ,IE = 10 mA, f = 200 MHz 200 MHz Collector output capacitance C ob VCB =- 1 0V ,IE =0 ,f=1M H z 4 p F Noixe voltage NV VCE =- 1 0V ,IC =- 1m A ,GV =8 0d B , Rg = 100KÙ, Function = FLAT 150 mV hFE Classification Marking Rank R S T hFE 130 220 185 330 260 450 I