2SB1219 PANASONIC

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Technical content

Parameter Symbol Conditions Min Typ Max Unit Collector cutoff current I CBO VCB = −20 V, IE = 0 − 0.1 µA Collector to 2SB1219 V CBO IC = −10 µA, IE = 0 −30 V base voltage 2SB1219A −60 Collector to 2SB1219 V CEO IC = −2 mA, IB = 0 −25 V emitter voltage 2SB1219A −50 Emitter to base voltage V EBO IE = −10 µA, IC = 0 −5V Forward current transfer ratio *1 hFE1 *2 VCE = −10 V, IC = −150 mA 85 340 hFE2 VCE = −10 V, IC = −500 mA 40 Collector to emitter saturation voltage *1 VCE(sat) IC = −300 mA, IB = −30 mA − 0.35 − 0.6 V Base to emitter saturation voltage *1 VBE(sat) IC = −300 mA, IB = −30 mA −1.1 −1.5 V Transition frequency f T VCB = −10 V, IE = 50 mA, f = 200 MHz 200 MHz Collector output capacitance C ob VCB = −10 V, IE = 0, f = 1 MHz 6 15 pF Rank Q R S No-rank hFE1 85 to 170 120 to 240 170 to 340 85 to 340 Marking 2SB1219 CQ CR CS C symbol 2SB1219A DQ DR DS D 2SB1219, 2SB1219A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD1820 and 2SD1820A I Features

  • Large collector current I C
  • S-mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. I Absolute Maximum Ratings Ta = 25°C Unit: mm Parameter Symbol Rating Unit Collector to 2SB1219 V CBO −30 V base voltage 2SB1219A −60 Collector to 2SB1219 V CEO −25 V emitter voltage 2SB1219A −50 Emitter to base voltage V EBO −5V Peak collector current I CP −1A Collector current I C −500 mA Collector power dissipation P C 150 mW Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C I Electrical Characteristics Ta = 25°C ± 3°C Note) *1: Pulse measurement *2: Rank classification Marking Symbol
  • 2SB1219 : C
  • 2SB1219A: D 2.1±0.1 1.3±0.1 0.3+0.1 –0.0 2.0±0.2 1.25±0.10 (0.425) (0.65) (0.65) 0.2±0.1 0.9±0.10 to 0.1 0.9+0.2 –0.1 0.15+0.10 –0.05 10° 1: Base 2: Emitter EIAJ: SC-70 3: Collector S-Mini Type Package Product of no-rank is not classi- fied and have no indication for rank.

2SB1219, 2SB1219A Transistors PC  Ta IC  VCE IC  IB VCE(sat)  IC VBE(sat)  IC hFE  IC fT  IE Cob  VCB VCER  RBE 0 160 40 120 80 Ambient temperature Ta (°C) Collector power dissipation PC (mW) 240 200 160 120 Collector to emitter voltage VCE (V) Collector current IC (mA) −800 −700 −600 −500 −400 −300 −200 −100 Ta = 25°C IB = −10 mA −9 mA −8 mA −7 mA –6 mA −5 mA −4 mA −3 mA −2 mA −1 mA Base current IB (mA) Collector current IC (mA) −800 −700 −600 −500 −400 −300 −200 −100 VCE = −10 V Ta = 25°C − 0.01 − 0.03 − 0.01 − 0.03 − 0.1 − 0.3 −10 −30 −100 Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (A) IC / IB = 10 Ta = 75°C 25°C −25°C − 0.01 − 0.03 −10 −30 −100 Base to emitter saturation voltage VBE(sat) (V) Collector current IC (A) IC / IB = 10 Ta = −25°C 75°C 25°C − 0.01 − 0.03 − 0.1 − 0.3 600 500 400 300 200 100 Forward current transfer ratio hFE VCE = −10 V Ta = 75°C 25°C −25°C Collector current IC (A) 1 3 10 30 10022 0 55 0 Transition frequency fT (MHz) 240 200 160 120 Emitter current IE (mA) VCB = −10 V Ta = 25°C Collector output capacitance Cob (pF) Collector to base voltage VCB (V) IE = 0 f = 1 MHz Ta = 25°C 13 10 30 100 300 1 000 Collector to emitter voltage VCER (V) Base to emitter resistance RBE (kΩ) −120 −100 −80 −60 −40 −20 IC = −2 mA Ta = 25°C 2SB1219A 2SB1219