2SB1219A_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
www.kexin.com.cn 1 Transistors PNP Transistors 2SB1219A ■ Features
- Large collector current IC
- Complementary to 2SD1820A
1 Base
2 Emitter
3 Collector
■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -0.5 Collector Current - Pulse ICP -1 Collector Power Dissipation PC 150 mW Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -60 Collector- emitter breakdown voltage VCEO Ic= -2 mA, IB=0 -50 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -50V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -4V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-300 mA, IB=-30mA -0.35 -0.6 Base - emitter saturation voltage VBE(sat) IC=-300 mA, IB=-30mA -1.1 -1.5 VCE= -10V, IC= -150 mA 85 340 VCE= -10V, IC= -500 mA 40 Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz 6 15 pF Transition frequency fT VCE= -10V, IC= -50 mA,f=200MHz 200 MHz V V uA DC current gain hFE ■ Classification of hfe(1) Type 2SB1219A-Q 2SB1219A-R 2SB1219A-S 2SB1219A Range 85-170 120-240 170-340 85-340 Marking DQ DR DS D
www.kexin.com.cn2 Transistors PNP Transistors 2SB1219A ■ Typical Characterisitics PC Ta IC VCE IC IB VCE(sat) IC VBE(sat) IC hFE IC fT IE Cob VCB VCER RBE 0610 40 12080 Ambient temperature Ta (°C) Collector power dissipation PC (mW) 240 200 160 120 Collector to emitter voltage VCE (V) Collector current I C (mA) −800 −700 −600 −500 −400 −300 −200 −100 Ta = 25°C IB = −10 mA −9 mA −8 mA −7 mA –6 mA −5 mA −4 mA −3 mA −2 mA −1 mA Base current I B (mA) Collector current IC (mA) −800 −700 −600 −500 −400 −300 −200 −100 VCE = −10 V Ta = 25°C − 0.01 − 0.03 − 0.01− 0.03 − 0.1 − 0.3 −10 −30 −100 Collector to emitter saturation voltage VCE(sat) (V) Collector current I C (A) IC / IB = 10 Ta = 75°C 25°C −25°C − 0.01− 0.03 −10 −30 −100 Base to emitter saturation voltage VBE(sat) (V) Collector current I C (A) IC / IB = 10 Ta = −25°C 75°C 25°C − 0.01 − 0.03 − 0.1 − 0.3 600 500 400 300 200 100 Forward current transfer ratio hFE VCE = −10 V Ta = 75°C 25°C −25°C Collector current IC (A) 1 3 10 30 1002 205 50 Transition frequency f T (MHz) 240 200 160 120 Emitter current I E (mA) VCB = −10 V Ta = 25°C Collector output capacitance C ob (pF) Collector to base voltage V CB (V) IE = 0 f = 1 MHz Ta = 25°C 1 3 10 30 100 300 1 000 Collector to emitter voltage V CER (V) Base to emitter resistance R BE (kΩ) −120 −100 −80 −60 −40 −20 IC = −2 mA Ta = 25°C 2SB1219A