2SB1218A_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

www.kexin.com.cn 1 Transistors PNP Transistors 2SB1218A ■ Features

  • High DC Current Gain
  • Complementary to 2SD1819A

1 Base

2 Emitter

3 Collector

■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -45 Collector - Emitter Voltage VCEO -45 Emitter - Base Voltage VEBO -7 Collector Current - Continuous IC -100 mA Collector Power Dissipation PC 150 mW Thermal Resistance From Junction To Ambient RΘJA 833 ℃/W Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -45 Collector- emitter breakdown voltage VCEO Ic= -2 mA, IB=0 -45 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -7 Collector-base cut-off current ICBO VCB= -40V , IE=0 -0.1 Collector-emitter cut-off current ICEO VCE= -20V , IB=0 -10 Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-100 mA, IB=-10mA -0.5 Base - emitter saturation voltage VBE(sat) IC=-100 mA, IB=-10mA -1.2 DC current gain hFE VCE= -10V, IC= -2 mA 160 460 Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz 2.7 pF Transition frequency fT VCE= -10V, IE= 1 mA,f=200MHz 80 MHz V V uA ■ Classification of hfe Type 2SB1218A-Q 2SB1218A-R 2SB1218A-S Range 160-260 210-340 290-460 Marking BQ BR BS

www.kexin.com.cn2 Transistors PNP Transistors 2SB1218A ■ Typical Characterisitics -0 -300 -600 -900 -1200 -0.1 -10 -100 001-01-1-1.0- -300 -600 -900 -1200 0 25 50 75 100 125 150 100 125 150 175 001-01-1- -10 -100 -1000 001-01-1- 1000 01-1-1.0- -10 -12 COMMON EMITTER VCE= -10V VBEIC —— BESE-EMMITER VOLTAGE VBE (mV) COLLECTOR CURRENT IC (mA) T a=25℃ Ta=100℃ β=10 IC VBEsat —— BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR CURREMT IC (mA) Ta=100 ℃ Ta=25℃ PC —— Ta AMBIENT TEMPERATURE Ta ( )℃ COLLECTOR POWER DISSIPATION PC (mW) Ta=100 ℃ Ta=25℃ β=10 IC VCEsat —— COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) COLLECTOR CURREMT IC (mA) 100 -0.3 300 IChFE —— Ta=100℃ Ta=25℃ DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) COMMON EMITTER VCE= -10V f=1MHz IE=0/IC=0 Ta=25 ℃ VCB/VEBCob/Cib —— Cob Cib REVERSE VOLTAGE V (V) CAPACITANCE C (pF) -20 COMMON EMITTER Ta=25℃ -30uA - 27uA -24uA -21uA -18uA -15uA -12uA -9uA -6uA IB=-3uA COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) Static Characteristic