2SB1216_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

www.kexin.com.cn 1 Transistors PNP Transistors 2SB1216 ■ Features

  • Low collector-to-emitter saturation voltage.
  • High current and high fT
  • Fast switching time.
  • Complementary to 2SD1816 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 1.50 +0.15 -0.15 0.80+0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.152.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3.80 TO-252 Unit: mm

1 Base

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -100 Emitter - Base Voltage VEBO -6 Collector Current - Continuous IC -4 Collector Current - Pulse ICP -8 Collector Power Dissipation Tc = 25℃ 20 Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V PC W A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -120 Collector- emitter breakdown voltage VCEO Ic= -1 mA, RBE=∞ -100 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -6 Collector-base cut-off current ICBO VCB= -100V , IE=0 -1 Emitter cut-off current IEBO VEB= -5V , IC=0 -1 Collector-emitter saturation voltage VCE(sat) IC=-2 A, IB=-200mA -0.2 -0.4 Base - emitter saturation voltage VBE(sat) IC=-2 A, IB=-200mA -0.9 -1.2 VCE= -5V, IC= -500 mA 70 400 VCE= -5V, IC= -3 A 40 Turn-ON Time ton 100 Storage Time tstg 800 Fall Time tf 50 Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz 65 pF Transition frequency fT VCE= -10V, IC= -500 mA 130 MHz DC current gain hFE See specified Test Circuit ns V V uA ■ Classification of hfe(1) Type 2SB1216-Q 2SB1216-R 2SB1216-S 2SB1216-T Range 70-140 100-200 140-280 200-400

www.kexin.com.cn2 Transistors PNP Transistors 2SB1216 ■ Typical Characterisitics IC=10IB1= --10IB2=2A For PNP, the polarity is reversed. VR RB VCC=50VVBE= --5V + + INPUT OUTPUT

100 F 470 F

PW=20 s IB1 D.C. 1% IB2 Switching Time Test Circuit IC -- VCE Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- A IC -- VCE Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- A --5 --4 --3 --2 --1 4--2--1--0 5--3-- 2SB1216 IB=0 --2mA --10mA --40mA --30mA --20mA --5mA From top --100mA --90mA --80mA --70mA --60mA --50mA --2.0 --1.6 --1.2 --0.8 --0.4 2SB1216 IB=0 --1mA --3mA --8mA --9mA --10mA --7mA --6mA --5mA --4mA --2mA IC -- VBE Base-to-Emitter Voltage, VBE -- V Collector Current, IC -- A hFE -- IC Collector Current, IC -- A DC Current Gain, hFE 100 --0.01 1000 5 --0.12 3 5 2 3 5 --1.0 2 3 5 --10 2SB1216 VCE= --5V Ta=75°C 25°C --25°C --5 --4 --3 --2 --1 2SB1216 VCE= --5V --25 Ta=75

www.kexin.com.cn 3 Transistors PNP Transistors 2SB1216 ■ Typical Characterisitics 2SB1216 f=1MHz 0.1 100 2 1.0 2 533 5 7 2 3 5 7 2SB1216 VCE=10V 2SB1216 Cob -- VCB 1.0 100 5 7 10 22 3 5 72 3 5 7 100 2SB1216 --10 --1.0 2SB1216 IC / IB=10 2SB1216 IC / IB=10 Ta= --25°C 25°C 75°C Ta=75°C 25°C --25°C --1000 --100 --10 VCE(sat) -- IC Collector Current, IC -- A Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV fT -- IC Gain-Bandwidth Product, fT -- MHz Collector Current, IC -- A Output Capacitance, Cob -- pF Collector-to-Base Voltage, VCB -- V VBE(sat) -- IC Collector Current, IC -- A Base-to-Emitter Saturation Voltage, VBE(sat) -- V For PNP, the minus sign is omitted. For PNP, the minus sign is omitted. 100 140 150120 16020 060 40 80 ICICP 1ms10ms 100ms DC operation (T c=25 °C) DC operation (T a=25 °C) 1.0 0.1 0.01 2 53 1.0 2 53 10 2 53 100 2 Tc=25°C Single pulse For PNP, the minus sign is omitted. 2SB1216 A S O Collector Current, IC -- A Collector-to-Emitter Voltage, VCE -- V Collector Dissipation, PC -- W Ambient Temperature, Ta -- °C PC -- Ta No heat sink Ideal heat dissipation