2SB1216 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
Features
Low collector-to-emitter saturation voltage. Good linearity of hFE. High fT. Fast switching time. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO -120 V Collector-emitter voltage V CEO -100 V Emitter-base voltage V EBO -6 V Collector current I C -4 A Collector current (pulse) I CP -8 A Collector dissipation 1 W TC =2 5 20 W Jumction temperature T j 150 Storage temperature T stg - 5 5t o+ 1 5 0 PC
www.kexin.com.cn Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current I CBO VCB = -100V , IE =0 - 1 ì A Emitter cutoff current I EBO VEB =- 4 V,IC =0 - 1 ì A VCE =- 5 V,IC = -0.5A 70 400 VCE =- 5 V,IC =- 3 A 4 0 Gain bandwidth product f T VCE =- 1 0 V,IC = -0.5A 130 MHz Output capacitance C ob VCB = -10V , f = 1MHz 65 pF Collector-emitter saturation voltage V CE(sat) IC =- 2 A,IB = -0.2A -200 -500 mV Base-to-emitter saturation voltage V BE(sat) IC =- 2 A,IB = -0.2A -0.9 -1.2 V Collector-to-base breakdown voltage V (BR)CBO IC =- 1 0 ì A,IE =0 - 1 2 0 V Collector-to-emitter breakdown voltage V(BR)CEO IC =- 1 m A,RBE = -100 V Emitter-to-base breakdown voltage V(BR)EBO IE =- 1 0 ì A,IC =0 - 6 V Turn-on time t on 100 ns Storage time t stg 800 ns Fall time t f 50 ns DC current Gain h FE 2SB1216 hFE Classification Rank Q R S T hFE 70 140 100 200 140 280 200 400