2SB1215_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
www.kexin.com.cn 1 Tran sistors PNP Transistors 2SB1215 ■ Features
- Low collector-to-emitter saturation voltage.
- High current and high fT
- Fast switching time.
- Complementary to 2SD1815 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 1.50 +0.15 -0.15 0.80+0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.152.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3.80 TO-252 Unit: mm
1 Base
2 Collector
3 Emitter
■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -100 Emitter - Base Voltage VEBO -6 Collector Current - Continuous IC -3 Collector Current - Pulse ICP -6 Collector Power Dissipation Tc = 25℃ 20 Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V PC W A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -120 Collector- emitter breakdown voltage VCEO Ic= -1 mA, RBE=∞ -100 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -6 Collector-base cut-off current ICBO VCB= -100V , IE=0 -1 Emitter cut-off current IEBO VEB= -5V , IC=0 -1 Collector-emitter saturation voltage VCE(sat) IC=-1.5 A, IB=-150mA -0.2 -0.5 Base - emitter saturation voltage VBE(sat) IC=-1.5 A, IB=-150mA -0.9 -1.2 VCE= -5V, IC= -500 mA 70 400 VCE= -5V, IC= -2 A 40 Turn-ON Time ton 100 Storage Time tstg 800 Fall Time tf 50 Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz 40 pF Transition frequency fT VCE= -10V, IC= -500 mA 130 MHz See specified Test Circuit ns V V uA DC current gain hFE ■ Classification of hfe(1) Type 2SB1215-Q 2SB1215-R 2SB1215-S 2SB1215-T Range 70-140 100-200 140-280 200-400
www.kexin.com.cn2 Transistors PNP Transistors 2SB1215 Switc hing Time Test Circuit IC=10IB1= --10IB2=1.5A For PNP, the polarity is reversed. VR RB VCC=50VVBE= --5V + + INPUT OUTPUT
100 F 470 F
PW=20 s IB1 D.C. 1% IB2 ■ Typical Characterisitics IC -- VCE Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- A IC -- VCE Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- A --2.0 --1.6 --1.2 --0.8 --0.4 4--2--1--0 5--3-- 2SB1215 IB=0 --2mA --6mA --12mA --18mA --20mA --16mA --10mA --8mA --4mA --14mA --1.0 --0.8 --0.6 --0.4 --0.2 2SB1215 IB=0 --0.5mA --1.5mA --4.0mA --3.5mA --3.0mA --2.5mA --2.0mA --1.0mA IC -- VBE Base-to-Emitter Voltage, VBE -- V Collector Current, IC -- A hFE -- IC Collector Current, IC -- A DC Current Gain, hFE 100 --0.01 1000 5 --0.12 3 5 2 3 5 --1.0 2 3 5 --10 2SB1215 VCE= --5V Ta=75°C 25°C --25°C --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 2SB1215 VCE= --5V --25 Ta=75
www.kexin.com.cn 3 Tran sistors PNP Transistors 2SB1215 VCE(sat) -- IC Collector Current, IC -- A Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV fT -- IC Gain-Bandwidth Product, fT -- MHz Collector Current, IC -- A 0.1 100 2 1.0 2 32 3 5 73 5 7 2SB1215 VCE=10V 2SB1215 2SB1215 IC / IB=10 Ta=75°C 25°C --25°C --1000 --100 --10 For PNP, the minus sign is omitted. ■ Typical Characterisitics VBE(sat) -- IC Collector Current, IC -- A Base-to-Emitter Saturation Voltage, VBE(sat) -- V --10 --1.0 2SB1215 IC / IB=10 Ta= --25°C 25°C 75°C Cob -- VCB Output Capacitance, Cob -- pF Collector-to-Base Voltage, VCB -- V 2SB1215 f=1MHz 1.0 100 5 7 10 22 3 5 72 3 5 7 100 2SB1215 For PNP, the minus sign is omitted. 2SB1215 IC ICP 1ms 10ms 100ms DC operation (T c=25 °C) DC operation (T a=25 °C) 1.0 0.1 0.01 2 53 1.0 2 53 10 2 53 100 2 A S O Collector Current, IC -- A Collector-to-Emitter Voltage, VCE -- V Tc=25°C Single pulse For PNP, the minus sign is omitted. 1.2 1.0 0.8 0.6 0.4 0.2 100 140120 16020 060 40 80 2SB1215 Collector Dissipation, PC -- W Ambient Temperature, Ta -- °C PC -- Ta Ideal heat dissipation
www.kexin.com.cn4 Tran sistors PNP Transistors 2SB1215 ■ Typical Characterisitics Collector Dissipation, PC -- W Case Temperature, Tc -- °C PC -- Tc 100 140120 16020 060 40 80 2SB1215