2SB1205_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

www.kexin.com.cn 1 Transistors PNP Transistors 2SB1205 ■ Features

  • Low collector-to-emitter saturation voltage.
  • High current and high fT
  • Fast switching time. 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 1.50 +0.15 -0.15 0.80+0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.152.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3.80 TO-252 Unit: mm

1 Base

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 Collector - Emitter Voltage VCEO -20 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -5 Collector Current - Pulse ICP -8 Base Current IB -0.5 Collector Power Dissipation Tc = 25℃ 10 Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V PC W A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -25 Collector- emitter breakdown voltage VCEO Ic= -1 mA, RBE=∞ -20 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -20V , IE=0 -0.5 Emitter cut-off current IEBO VEB= -4V , IC=0 -0.5 Collector-emitter saturation voltage VCE(sat) IC=-3 A, IB=-60mA -0.25 -0.5 Base - emitter saturation voltage VBE(sat) IC=-3 A, IB=-60mA -1 -1.3 VCE= -2V, IC= -500 mA 100 400 VCE= -2V, IC= -4 A 60 Turn-ON Time ton 40 Storage Time tstg 200 Fall Time tf 10 Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz 60 pF Transition frequency fT VCE= -5V, IC= -200 mA 320 MHz V V uA DC current gain hFE See specified Test Circuit ns ■ Classification of hfe(1) Type 2SB1205-R 2SB1205-S 2SB1205-T Range 100-200 140-280 200-400

www.kexin.com.cn2 Transistors PNP Transistors 2SB1205 Switc hing Time Test Circuit VR RB RL VCC= --10VVBE=5V + + 50Ω INPUT OUTPU 100µF 470µF PW=20µs IB1 D.C.≤1% IB2 IC=10IB1= --10IB2= --2A ■ Typical Characterisitics IC -- VCE Collector Current, IC -- A Collector-to-Emitter Voltage, VCE -- V IC -- VCE Collector Current, IC -- A Collector-to-Emitter Voltage, VCE -- V --5 --4 --3 --2 --1 IB=0 --10mA --20mA --30mA --40mA --60mA --50mA --5 --4 --3 --2 --1 4--2--1--0 5--3-- IB=0 --5mA --10mA --15mA --20mA --25mA --30mA --35mA--40mAFrom top --100mA --90mA --80mA --70mA IC -- VBE Base-to-Emitter Voltage, VBE -- V Collector Current, IC -- A hFE -- IC Collector Current, IC -- A DC Current Gain, hFE VCE= --2V --6 --1 --2 --4 --3 --5 Ta=75 --25 100 --0.01 1000 --0.12 3 5 2 3 5 2 3 55 --1.0 --10 VCE= --2V Ta=75°C 25°C --25°C

www.kexin.com.cn 3 Tran sistors PNP Transistors 2SB1205 ■ Typical Characterisitics VCE(sat) -- IC Collector Current, IC -- A Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV fT -- IC Collector Current, IC -- A Gain-Brandwidth Product, fT -- MHz Cob -- VCB Collector-to-Base Voltage, VCB -- V Output Capacitance, Cob -- pF VBE(sat) -- IC Collector Current, IC -- A Base-to-Emitter Saturation Voltage, VBE(sat) -- mV --1000 --100 --10 1000 100 01--0.1--3 7 735 5 322 100 IC / IB=50 Ta= --25°C25°C 75°C --10 --1.0 IC / IB=50 Ta= --25°C 25°C 75°C f=1MHzVCE= --5V PC -- TaA S O Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- A Ambient Temperature, Ta -- °C Collector Dissipation, PC -- W 0610 120 14010080604020 Tc=25°C Single pulse --1.0--0.1 --102 3 5 7 2 3 5 2 3 57 --10 --1.0 --0.1 DC operation(T a=25 °C) DC operation(Tc=25 °C) 1ms10ms100ms ICP= --8A IC= --5A No heat sink