2SB1204_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

www.kexin.com.cn 1 Tran sistors PNP Transistors 2SB1204 ■ Features

  • Low collector-to-emitter saturation voltage.
  • High current and high fT
  • Fast switching time.
  • Complementary to 2SD1804 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 1.50 +0.15 -0.15 0.80+0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.152.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3.80 TO-252 Unit: mm

1 Base

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 Emitter - Base Voltage VEBO -6 Collector Current - Continuous IC -8 Collector Current - Pulse ICP -12 Collector Power Dissipation Tc = 25℃ 20 Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V PC W A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -60 Collector- emitter breakdown voltage VCEO Ic= -1 mA, RBE=∞ -50 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -6 Collector-base cut-off current ICBO VCB= -50V , IE=0 -1 Emitter cut-off current IEBO VEB= -5V , IC=0 -1 Collector-emitter saturation voltage VCE(sat) IC=-4 A, IB=-200mA -0.25 -0.5 Base - emitter saturation voltage VBE(sat) IC=-4 A, IB=-200mA -0.95 -1.3 VCE= -2V, IC= -500 mA 70 400 VCE= -2V, IC= -6 A 35 Turn-ON Time ton 50 Storage Time tstg 450 Fall Time tf 20 Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz 95 pF Transition frequency fT VCE= -5V, IC= -1 A 130 MHz DC current gain hFE See specified Test Circuit ns V V uA ■ Classification of hfe(1) Type 2SB1204-Q 2SB1204-R 2SB1204-S 2SB1204-T Range 70-140 100-200 140-280 200-400

www.kexin.com.cn2 Transistors PNP Transistors 2SB1204 Switching Time Test Circuit VR RB VCC=25VVBE= --5V + + 50Ω INPUT RL OUTPUT 100µF 470µF PW=20µs IB1 D.C.≤1% IB2 IC=10IB1= --10IB2=4A (For PNP, the polarity is reversed.) ■ Typical Characterisitics --10 --8 --6 --4 --2 2SB1204 From top --160mA --140mA --120mA --100mA IC -- VCE --10mA --80mA --20mA --60mA --40mA IB=0 Collector Current, I C – A Collector-to-Emitter Voltage, VCE – V --5 --4 --3 --2 --1 2SB1204 IC -- VCE --10mA --15mA --20mA --25mA --30mA --5mA IB=0 Collector Current, I C – A Collector-to-Emitter Voltage, VCE – V hFE -- IC Ta=75°C --25°C 25°C 100 1000 2SB1204 VCE= --2V 2SB1204 VCE= --2V Ta=75 --25 --9 --6 --5 --8 --7 --4 --3 --1 --2 IC -- VBE Collector Current, IC – A Base-to-Emitter Voltage, VBE – V DC Current Gain, hFE Collector Current, IC – A

www.kexin.com.cn 3 Tran sistors PNP Transistors 2SB1204 ■ Typical Characterisitics --0.1 --1.032 5 7 32 5 7 --1032 5 7 2SB1204 VCE= --5V fT -- IC 100 Collector Current, I C Gain-Bandwidth Product, f T – MHz Cob -- VCB 100 3 72 01--0.1-- 5 3 72 575 --100 2SB1204 f=1MHz Output Capacitance, Cob -- pF Collector-to-Base Voltage, VCB -- V VBE (sat) -- IC --1.0 --10 Ta= --25°C 25°C 2SB1204 IC / IB=20 75°C Ta=75°C --25°C --0.1--0.01 2 3 5 753275 7 --1.0 2 3 5 7 --10 --1000 --100 --10 VCE (sat) -- I C --0.1--0.01 2 3 5 753275 7 --1.0 2 3 5 7 25°C 2SB1204 IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) – mV Collector Current, IC – A Base-to-Emitter Saturation Voltage, VBE(sat) – V Collector Current, IC – A 20 060 40 80 100 140120 160 PC -- Ta No heat sink 2SB1204 10ms 1.0 0.1 0.01 101.00.1 2 53 7 2 53 7 2 53 7 100 DC operation Ta=25 DC operation Tc=25 Tc=25°C Single pulse (For PNP, minus sign is omitted.) ICP=12A 1ms IC=8A 2SB1204 A S O 100ms Collector-to-Emitter Voltage, VCE – V Collector Current, IC – A Collector Dissipation, PC – W Ambient Temperature, Ta – ˚C