2SB1203-Q

2SB1203_15 KEXIN

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 3

Technical content

www.kexin.com.cn 1 Transistors PNP Transistors 2SB1203 ■ Features

• Low collector-to-emitter saturation voltage.
• High current and high fT
• Fast switching speed
• Complementary to 2SD1803 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 1.50 +0.15 -0.15 0.80+0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.152.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3.80 TO-252 Unit: mm

1 Base

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 Emitter - Base Voltage VEBO -6 Collector Current - Continuous IC -5 Collector Current - Pulse ICP -8 Collector Power Dissipation Tc = 25℃ 20 Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V PC W A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -60 Collector- emitter breakdown voltage VCEO Ic= -1 mA, RBE=∞ -50 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -6 Collector-base cut-off current ICBO VCB= -50V , IE=0 -1 Emitter cut-off current IEBO VEB= -5V , IC=0 -1 Collector-emitter saturation voltage VCE(sat) IC=-3 A, IB=-150mA -0.28 -0.55 Base - emitter saturation voltage VBE(sat) IC=-3 A, IB=-150mA -0.95 -1.3 VCE= -2V, IC= -500 mA 70 400 VCE= -2V, IC= -4 A 35 Turn-ON Time ton 50 Storage Time tstg 450 Fall Time tf 20 Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz 60 pF Transition frequency fT VCE= -10V, IC= -1 A 130 MHz V V uA DC current gain hFE See specified Test Circuit ns ■ Classification of hfe(1) Type 2SB1203-Q 2SB1203-R 2SB1203-S 2SB1203-T Range 70-140 100-200 140-280 200-400

www.kexin.com.cn2 Transistors PNP Transistors 2SB1203 ■ Typical Characterisitics IC=10IB1= --10IB2=2A For PNP, the polarity is reversed. VR RB VCC=25VVBE= --5V + + INPUT RL OUTPUT

100 F 470 F

PW=20 s IB1 D.C. 1% IB2 Switc hing Time Test Circuit IC -- VCE Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- A IC -- VCE Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- A --5 --4 --3 --2 --1 2SB1203 From top --100mA --90mA --80mA --70mA --60mA --10mA --50mA --20mA --30mA --40mA IB=0 --5 --4 --3 --2 --1 2SB1203 --10mA --15mA --20mA --25mA --30mA --5mA IB=0 IC -- VBE Base-to-Emitter Voltage, VBE -- V Collector Current, IC -- A hFE -- IC Collector Current, IC -- A DC Current Gain, hFE Ta=75°C --25°C 25°C 100 1000 2SB1203 VCE= --2V 2SB1203 VCE= --2V Ta=75° C --25 --6 --5 --4 --3 --1 --2

www.kexin.com.cn 3 Tran sistors PNP Transistors 2SB1203 ■ Typical Characterisitics fT -- IC Gain-Bandwidth Product, fT -- MHz Collector Current, IC -- A Cob -- VCB Output Capacitance, Cob -- pF Collector-to-Base Voltage, VCB -- V --0.1 --1.032 5 7 32 5 7 --1032 5 7 2SB1203 VCE= --5V 100 1000 100 3 72 01--0.1-- 5 3 72 575 --100 2SB1203 f=1MHz VCE(sat) -- IC Collector Current, IC -- A Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV VBE(sat) -- IC Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector Current, IC -- A --1.0 --10 Ta= --25°C 25°C 2SB1203 IC / IB=20 75°C Ta=75 --25°C --0.1--0.01 2 3 5 753275 7 --1.0 2 3 5 7 --10 --1000 --100 --10 --0.1--0.01 2 3 5 753275 7 --1.0 2 3 5 7 01-- 25°C 2SB1203 IC / IB=20 A S O Collector Current, IC -- A Collector-to-Emitter Voltage, VCE -- V Collector Dissipation, PC -- W Ambient Temperature, Ta -- °C PC -- Ta 20 060 40 80 100 140120 160 2SB1203 10ms 1.0 0.1 0.01 101.0 2 53 7 2 53 70.1 2 53 7 100 DC operation Ta=25 DC operation Tc=25 ICP 1ms IC 2SB1203 100ms No heat sink Ideal heat dissipation Tc=25°C Single pulse For PNP, the minus sign is omitted.