2SB1201 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
Features
. Adoption of FBET, MBIT processes - Large current capacity and wide ASO - Low collector-to-emitter saturation voltage - Fast switching speed - Small and slim package making it easy to make 2SB1201/2SD1801-used sets smaller ( ):28B1201 Absolute Maximum Ratings at Ta=25°C unit Collector to Base Voltage Voso (-)60 v Collector to Emitter Voltage = Vcro (-)50 Vv Emitter to Base Voltage VEBO (-)6 Vv Collector Current Ic (-)2 A Collector Current(Pulse) Top (~)4 A Collector Dissipation Po 0.8 Ww Te=25°C 15 WwW Junction Temperature Tj 150 °C Storage Temperature Tstg -—55to+150 °C Electrical Characteristics at Ta= 25°C min typ max unit Collector Cutoff Current lego Vop=(—)50V,Ig=0 (~)100 nA Emitter Cutoff Current IEBo Vep=(—-)4V,Ic¢=0 (-)100 nA DC Current Gain bre) Veg=(—)2V,I¢=(—)100mA. 100* 560% hrg(2)) Vog=(—)2V Ig=(—)1.5A 40 Gain-Bandwidth Product fp Vor=(—)10V,Ig=(—)50mA 150 MHz Output Capacitance Cob Voe=(—)10V,f=1MHz (22)12 pF C-E Saturation Voltage Vegisat) Io=(-)1A,Igp=(—)50mA 0.15 0.4 Vv (-0.3) (—0.7) Continued on next page. % : The 25B1201/2SD1801 are classified by 100mA hry as follows :
100 R 200 140 S 280 200 T 400 280 U 560
Package Dimensions 2045B Package Dimensions 2044B (unit:mm) ,.&5_., 2-3, (unit : mm) 1 | il t gest . ari : He 1) 2% 0; 4 06 ul Os O86. E on 1: Base 123 1: Base 3: Emitter 2: Collector 4:Collector pa) 3: Emitter SANYO: TP-FA 29-f-f-f-2a —42Collector SANYO: TP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 10 JAPAN 8259MO/4137KI/4076KL,TS No.2112-1/4
Continued from preceding page. min typ max unit B-E Saturation Voltage VpE(sat) Io=(—)1A,Ip=(—)50mA (—)0.9 (-)1.2 v C-B Breakdown Voltage Verceo I¢=(—)10pAIg=0 (-)60 Vv C-E Breakdown Voltage Vesryceo = Ic =(—)1mA,Rpg= (-)50 v E-B Breakdown Voltage Verso Ig=(—)10pA,Io=0 (-)6 Vv Turn-on Time ton See specified Test Circuit. 60 ns Storage Time tetg + (450)550 ns Fall Time te a 30 ns Switching Time Test Circuit . boy eetsin, = Ot ouput INPUT Re (fF ° aT FY RL 50. YR is rn o25v 4 vge=-5¥ 1c=101B1=-101 82=500ma, Vcc=25V (For PNP, the polarity is reversed.) Unit (Resistance : 2, Capacitance : F) nas Ic - VCE ae Te - Vee } | 2sp1201 gosh . esqtsat i uot < y < 2-1-6 Lif \\ _-T —-——- B16 5 ot to 5-12 y im —_- Ba. Bye Ls ao
8 L, 3 —
3 -0.8 3 08 3 3 NBs) fice | WT el | “ART Fi A __ 89 0a 08 2 6-2. de 0 06 08 12 16 20 246 Collector to Emitter Voltage,Vcp — V Collector to Emitter Voltage,Vcg — V Ic - Vee Ic_- Vee 1200 4200 (= | | | bap s -f000 000 ——= Ve pest | i er | 2° Cr 7° t el| Eo fo aa ae oO oO i} : p a i (ee oO -2 4 “6 “8 =10 -2 oO 2 4 6 8 10 12 Collector to Emitter Voltage, Vc — V Collector to Emitter Voltage, Vox - V SSS No.2112-2/4
n24 Ic = Ve 26 Tc ~ Vee Vces-2v VcEs2v < 720 < 2.0 ee |) é 1.2 & 4.2 SEPT eg . VSS YL / Base to Emitter Voltage,Vpz — V Base to Emitter Voltage, Vpp — V To = imi aei20i i eet H Veerrey a Prenebet Tg Ti TT 44 33 yp = 75°C 4a ft a | g Target tT Ss ESS Pell NL, LEP
3 HA} et} 3 mE
3 imsaiial cl : 8 TOC Te nim ER Oe eeerre IiSett ents 01 Collector Current A on Collector Currentlg — A “° . fT - Ic fr -I¢ : eee 2“ ae 5 a 5 js | | [J yy TT Vee=10 a ee a eee nee ee eee
3 Ft eS s ett tty tt tt iA
5 a a | a an SO A E Ltt it tt =n 2] Ty Titty Coo OO @§ ooo SLIT UT TTT) e LITT ET “” Collector Currentalg ma” ° Collector Current.lg ~mA~
2 Cob - Ves 9 Sob - Yop
Tes) “oot eae 100, ep ee PEEL z= j Ree a] fi it] titi ere) PR 2 ttre z ~S oO oO COST) B.-L. 3 310 i a mH AS ee ad Collector to Base Voltage,Veg -V "0 Collector to Buse Voltage,Vgp—V ° No.2112-3/4
2$B1201/25D1801
1000 Vee(sat) - Ie 1000 Vee(sat) - Ic
= 2 7 t git Hi Tey) « a B ere A pot A Pars > Ber OALH pte ES ff 2 be | & Ooo agAcoe ed 4s ey zs 2, se Ls ae ef JU ACA 23 | LA [| [] tit Ty) 3 J peer TT FE a Pe +10 10, + 0.08 01 =A0 0.01 oO. 1.0 Collector Currentlc — A Collector Currentig - A “0 VBE(sat) - Ic 0 VBE(sat) ~ Ic > tt ee > HH ie Catt Tt tT wg TP PT) 8 g > > edit tty gop BT) eT 2 2s se pee | oe eee eee a2 gterese yt | ge (trrsett Ti i ETT TTT T° Te Loo * 3 F729, 2 F574 o 23 0.01 a *3 1.0 Collector CurrentyIg — A Collector Currentile — A ASO 6 Pc - Ta ao tr SRR, | TTI 8 KN] 35081201/2501801 ig Ge RES So SANS bet PE NT eo 7 LNT AWN TTT * | | tN || [|
2 Drea} E10 N
§ 2, fe SOW G8 s Sot tlt Test eT) 8 LINE Sees a \\ 3° 2S eee eee ene & MTT) og‘ KI a (bar PNP, minus sign is omitted.) SX}+— . A setae +S = Collector to Emitter Voltage, Voce, — V ° ® ambient Temperature,Ta vc“? *° 1 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. HM Anyone purchasing any products described or contained herein for an above-mentioned use shall: @ Accept {ull responsibility and indemnify and defend SANYO ELECTRIC CO,, LTO, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all, damages, cost and expenses associated with such use: @® Not impose any responsiblity for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affilates, subsidiaries and distributors or any of their officers and employees jointly or severally, M@ Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. No.2112-4/4