2SB1197_15 KEXIN

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Low VCE(sat).VCE(sat) -0.5V IC / IB= -0.5A / -50mA . IC = -0.8A. PNP silicon transistor Absolute Maximum Ratings Ta = 25 tinUgnitaRlobmySretemaraP VegatloVesab-rotcelloC CBO -40 V VegatloVrettime-rotcelloC CEO -32 V VegatloVesab-rettimE EBO -5 V ItnerrucrotcelloC C -0.8 A PnoitapissidrewoprotcelloC C 0.2 W TerutarepmetnoitcmuJ j 150 TerutarepmetegarotS stg -55 to +150 Electrical Characteristics Ta = 25 tinUxaMpyTniMsnotiidnotseTlobmySretemaraP C Collector-base breakdown voltag VCBO IC = -50 A -40 V Collector-emitter breakdown voltage V CEO IC V23-Am1-= Emitter-base breakdown voltage VEBO IE = -50 A -5 V ItnerrucffotucrotcelloC CBO VCB 5.0-V02-= A ItnerrucffotucrettimE EBO VEB 5.0-V4-= A Collector-Emitter Saturation Voltage VCE(sat) IC = -0.5A , IB V5.0-Am05-= hoitarrefsnarttnerrucCD FE VCE = -3V , IC = -100mA 120 390 CecnaticapaCtuptuO ob VCB = -10V , IE = 0A , f = 1MHz 12 30 pF fycneuqerfnoitisnarT T VCE = -5V , IE = 50mA , f = 100MHz 200 MHz hFE Classification PNP Transistors 2SB1197 (2SB1197K) Type 2SB1197/K-Q 2SB1197/K-Q Range 120-270 180-390 Marking AHQ AHR 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1.Base 2.Emitter 3.collector 1 2 Unit: mmSOT-23 0.1+0.05 -0.01

www.kexin.com.cn2 Transistors PNP Transistors 2SB1197 (2SB1197K) ■ Typical Characterisitics 01-1-1.0- 100 001-01- 100 001-01-1- 100 1000 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 -0.1 -1 -10 -100 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -0.1 -1 -10 -100 0.0 0.1 0.2 0.3 0.4 0.5 0.6 -50 -100 -150 -200 -250 -300 -350 f=1MHz IE=0 / IC=0 Ta=25 o C REVERSE VOLTAGE V (V) CAPACITANCE C (pF) VCB / VEBCob / Cib — — Cib Cob -20 TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (mA) VCE=-5V Ta=25 o C IC fT — — 300 VCE= -3V Ta =100 o C Ta =25 o C COLLECTOR CURRENT IC (mA) DC CURRENT GAIN hFE IChFE — — - 800 COLLECTOR POWER DISSIPATION Pc (W) AMBIENT TEMPERATURE Ta ( )℃ Pc —— Ta Ta=100℃ -800 COLLECTOR CURRENT IC (mA) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) Ta =25℃ Ta =100℃ β=10 ICVBEsat — — -800 Ta=25℃ β=10 VCEsat —— IC COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) COLLECTOR CURRENT IC (mA) COMMON EMITTER Ta=25℃ -1mA -0.9mA -0.8mA -0.7mA -0.6mA -0.5mA -0.4mA -0.3mA -0.2mA IB=-0.1mA COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA) Static Characteristic