2SB1188T100Q LITTELFUSE
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1/3 www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 2009.12 - Rev.B Medium power transistor (32V, 2A) 2SB1188 / 2SB1182 / 2SB1240 Features Dimensions (Unit : mm) 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862. Structure Epitaxial planar type PNP silicon transistor Absolute maximum ratings (Ta=25C) ∗1 Single pulse, Pw=100ms ∗2 When mounted on a 40×40×0.7 mm ceramic board. ∗3 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger. Parameter VCBO VCEO VEBO PC Tj Tstg −40 V V V A(DC) W W W (Tc=25 °C) W −32 IC A (Pulse)−3 0.5 2SB1188 2SB1182 2SB1240 150 −55 to 150 Symbol Limits Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature (1) Base (2) Collector (3) Emitter ROHM : CPT3 EIAJ : SC-63 2SB1188 2SB1240 2SB1182 (1) Base (2) Collector (3) Emitter ROHM : MPT3 EIAJ : SC-62 (1) Emitter (2) Collector (3) Base ROHM : ATV 1.0 6.8±0.2 2.5±0.2 1.05 0.45±0.1 2.54 2.54 0.5±0.1 0.9 4.4±0.214.5±0.5 (1) (2) (3) 0.65Max. −0.1 +0.2 −0.05 +0.1 −0.1 +0.2 +0.2 −0.1 (3)(2)(1) 1.0±0.2 0.5±0.1 4.0±0.3 2.5 3.0±0.2 1.5±0.11.5±0.1 0.4 1.5 4.5 1.6±0.1 −0.1 +0.2 −0.1 +0.2 +0.3 −0.1 2.3±0.22.3±0.2 0.65±0.1 0.9 0.75 1.0±0.2 0.55±0.1 9.5±0.5 5.5 1.5±0.3 2.5 1.5 2.3 0.5±0.1 6.5±0.2 5.1 C0.5 (3)(2)(1) 0.9 Abbreviated symbol: BC∗ ∗ Denotes hFE
2/3 www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 2009.12 - Rev.B Data Sheet 2SB1188 / 2SB1182 / 2SB1240 Electrical characteristics (Ta=25C) ∗ Measured using pulse current. Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. −40 −32 120 100 390 −0.8 VI C= −50μA IC= −1mA IE= −50μA VCB= −20V VEB= −4V IC/IB= −2A/ −0.2A VCE= −5V, IE=0.5A, f=100MHz VCB= −10V, IE=0A, f=1MHz V V μA μA −− VCE= −3V, IC= −0.5A V MHz pF Typ. Max. Unit Conditions −0.5 Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Packaging specifications and h FE Package Code Basic ordering unit (pieces) Taping T100 TL 1000 2500 QR hFE QR 2SB1188 2SB1182 TV2 2500 QR2SB1240 Type hFE values are classified as follows : Item hFE Q 120 to 270 R 180 to 390 Electrical characteristic curves Fig.1 Grounded emitter propagation characteristics BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (mA) −10 −20 −50 −100 −200 −500 −1000 VCE= −3V Ta=100°C 25°C −40°C Fig.2 Grounded emitter output characteristics −0.1 −0.2 −0.3 −0.4 −0.5 IB=0A −250μA −500μA −750μA −1mA −1.25mA −1.5mA −1.75mA −2mA −2.25mA−2.5mA COLLECTOR CURRENT : IC (A) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Ta=25°C Fig.3 DC current gain vs. collector curren ( ) DC CURRENT GAIN : hFE 100 200
500 Ta=25°C
COLLECTOR CURRENT : IC (mA) VCE= −6V −3V −1V
3/3 www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 2009.12 - Rev.B Data Sheet 2SB1188 / 2SB1182 / 2SB1240 Fig.4 DC current gain vs. collector current ( ) 100 200 500DC CURRENT GAIN : hFE VCE= −3V COLLECTOR CURRENT : IC (mA) Ta=100°C 25°C −25°C Fig.5 Collector-emitter saturation voltage vs. collector current ( ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) COLLECTOR CURRENT : IC (mA) −50 −100 −200 −500 Ta=25°C IC/IB=50 Fig.6 Collector-emitter saturation voltage vs. collector current ( ) −20 −50 −100 −200 −500 lC/lB=10 COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) COLLECTOR CURRENT : IC (mA) Ta=100°C 25°C −40°C Fig.7 Base-emitter saturation voltage vs. collector current COLLETOR CURRENT : IC (mA) BASE SATURATION VOLTAGE : VBE(sat)(V) −0.1 −0.05 −0.2 −0.5 IC /IB=10 Ta=25°C Fig.8 Gain bandwidth product vs. emitter current Ta=25°C VCE= −5V EMITTER CURRENT : IE (mA) TRANSITION FREQUENCY : fT (MHz) 5 10 20 50 100 500 1000 200 0200 100 200 500 Fig.9 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) Ta=25°C f=1MHz IE=0A IC=0A 200 300 100 Cib Cob Fig.10 Safe operation area (2SB1188) −0.01 −0.05 −0.02 −0.1 −0.5 −0.2 COLLECTOR CURRENT : IC (A) COLLECTOR TO EMITTER VOLTAGE : VCE (V) DC Pw=100ms Pw=10ms Ta=25°C ∗Single nonrepetitive pulse I C Max. (pulse) Fig.11 Safe operation area (2SB1182) −0.01 −0.05 −0.02 −0.1 −0.5 −0.2 COLLECTOR CURRENT : IC (A) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Ta=25°C ∗Single nonrepetitive pulse IC Max. (Pulse) DC PW=500μs PW=100ms PW=1ms
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