2SB1181_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

www.kexin.com.cn 1 Transistors PNP Transistors 2SB1181 ■ Features

  • Hight breakdown voltage and high current.
  • Low collector-emitter saturation voltage VCE(sat)
  • Good hFE linearty.
  • Complementary to 2SD1733 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 1.50 +0.15 -0.15 0.80+0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.152.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3.80 TO-252 Unit: mm

1 Base

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO -80 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -1 Collector current -Pulse ICP -2 Collector Power Dissipation Tc=25°C 10 Ta = 25℃ 1 Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V A PC W ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -80 Collector- emitter breakdown voltage VCEO Ic= -1 mA, IB=0 -80 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -60V , IE=0 -1 Emitter cut-off current IEBO VEB= -4V , IC=0 -1 Collector-emitter saturation voltage VCE(sat) IC=-500 mA, IB=-50mA -0.4 Base - emitter saturation voltage VBE(sat) IC=-500 mA, IB=-50mA -1.2 DC current gain hFE VCE= -3V, IC= -100 mA 120 390 Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz 25 pF Transition frequency fT VCE= -10V, IE= 50mA,f=100MHz 100 MHz V V uA ■ Classification of hfe Type 2SB1181-Q 2SB1181-R Range 120-270 180-390

www.kexin.com.cn2 Transistors PNP Transistors 2SB1181 ■ Typical Characterisitics Fig.1 Grounded emitter propagation characteristics −0.1 −100 −1000 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (mA) −0.8 −1.2 −1.6 −10 Ta=25°C VCE = −5V Fig.2 Grounded emitter output characteristics −0.2 −0.8 −1.0 −0.4 −0.6 COLLECTOR CURRENT : IC (A) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Ta=25°C −0.5mA IB=0mA −1mA −1.5mA −2mA −2.5mA −3mA −3.5mA −4mA −4.5mA Fig.3 DC current gain vs. collector current COLLECTOR CURRENT : IC (mA) DC CURRENT GAIN : h FE −1000 100 200 500 1000 VCE = − 3V −1V Ta=25°C Fig.4 Collector-emitter saturation voltage vs. collector current −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 Ta=25°C IC/IB=20 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (mA) Fig.5 Gain bandwidth product vs. emitter current 1 2 5 10 20 50 100 200 500 1000 100 200 500 1000 EMITTER CURRENT : IE (mA) TRANSITION FREQUENCY : fT (MHz) Ta=25°C VCE = −5V Fig.6 Collector output capacitance vs. collector-base voltage 100 200 500 1000 Ta=25°C f=1MHz IE=0A COLLECTOR OUTPUT CAPACITANCE : Cob (pF) COLLECTOR TO BASE VOLTAGE : VCB (V)