2SB1169_15 KEXIN

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  • Manufacturer or author: Provided By digicamel.com
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Technical content

www.kexin.com.cn 1 Transistors PNP Transistors 2SB1169 ■ Features

  • High forward current transfer ratio hFE which has satisfactory linearity
  • Low collector-emitter saturation voltage VCE(sat) 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 1.50 +0.15 -0.15 0.80+0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.152.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3.80 TO-252 Unit: mm

1 Base

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -60 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -1 Collector current -Pulse ICP -2 Collector Power Dissipation 15 Ta = 25℃ 1.3 Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V A PC W ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -60 Collector- emitter breakdown voltage VCEO Ic= -30 mA, IB=0 -60 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -60V , IE=0 -0.1 mA Collector-emitter cut-off current ICES VCE = −60 V, IB = 0 -200 Collector-emitter cut-off current ICEO VCE = −30 V, IB = 0 -300 Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 mA Collector-emitter saturation voltage VCE(sat) IC=-1 A, IB=-125mA -1 Base - emitter saturation voltage VBE(sat) IC=-1 A, IB=-125mA -1.2 Base - emitter voltage VBE VCE= -4V, IC= -1 A -1.3 VCE= -4V, IC= -200 mA 40 450 VCE= -4V, IC= -1 A 15 Turn-ON Time ton 0.5 Storage Time tstg 1.2 Fall Time tf 0.3 Transition frequency fT VCE= -10V, IC= -500mA,f=10MHz 40 MHz IC = −1 A, IB1 = −50 mA, IB2 = 50 mA VCC = −50 V us V uA V DC current gain hFE ■ Classification of hfe(1) Type 2SB1169-R 2SB1169-Q 2SB1169-P 2SB1169-O Range 40-90 70-150 120-250 200-450

www.kexin.com.cn2 Transistors PNP Transistors 2SB1169 ■ Typical Characterisitics VCE(sat) IC hFE IC fT IC PC Ta IC VCE IC VBE Raera noitarepo efaS th t 0610 40 12080 Collector power dissipation PC (W) Ambient temperature Ta (°C) (1)TC=Ta (2)Without heat sink (PC=1.3W) (1) (2) − 0.5 −1.0 −1.5 −2.5 −2.0 Collector current IC (A) Collector-emitter voltage VCE (V) TC =25˚CIB =–40mA –30mA –25mA –20mA –10mA –8mA –6mA –4mA –2mA −10 Collector current IC (A) Base-emitter voltage VBE (V) TC =100˚C 25˚C V CE =–4V –25˚C − 0.01 − 0.01 − 0.1 −10 −100 − 0.1 −1 −10 IC/IB=10 25˚C TC =100˚C –25˚C Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (A) Forward current transfer ratio h FE Collector current IC (A) 102 104 103 V CE =–4V TC =100˚C 25˚C –25˚C Transition frequency f T (MHz) Collector current IC (A) 102 104 103 VCE=–5V f=10MHz TC=25˚C − 0.01 − 0.1 −10 −100 −10 −100 −1 000 Non repetitive pulse TC=25˚C t=10ms t=300ms t=1ms ICP IC 2SB1169 Collector current IC (A) Collector-emitter voltage VCE (V) (1) (2) (1)Without heat sink (2)With a 50×50×2mm Al heat sink 10−1 103 102 Thermal resistance R th (°C/W) Time t (s) 10−3 10410310210110−110−2