2SB1168 SANYO

Document overview

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Technical content

Features

  • Low collector-to-emitter saturation voltage + High fy . Excellent linearity of hep . Fast switching time ( ): 28B1168 Absolute Maximum Ratings at Ta=25°C : unit Collector-to-Base Voltage Vopo (-)120 v Collector-to-Emitter Voltage Vogo (=) 100 Vv Emitter-to-Base Voltage VeBo (-)6 v Collector Current Ic (-)4 A Collector Current (Pulse) Icp (-)8 A Collector Dissipation Po 1.2 W Te=25°C 20 Ww Junction Temperature Tj 150 °C Storage Temperature Tstg -55 to +150 °c Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current I¢go Vop=(-) 100V,I,=0 (-)1 pa Emitter Cutoff Current Ipp Vepe(-)AV, Ige0 (-)1 pA DC Current Gain hepet) Vog=(-)5V,I¢=(-)0.58 70* 400* hpp(2) — Voge(-)5V,I¢=(-)3A 40 Gain-Bandwidth Product fy Voge (~-)10V,I¢=(-)0.5A 180 MHz (130) MHz Output Capacitance Cop Voge (-) 10V, f= 1MHz 40 pF (65) PF C-E Saturation Voltage Vop(gat) Ic=(-)2A,Ig=(-)0.2a 150 400 mv Continued on next page. #: The 2SB1168/2SD1725 are classified by 0.5A hpp as follows:

70 Q 140 100 R 200 140 S280 200 T 400

(unitimm) .— 146 15.5 12 [ese ree i [Ho Smee 8 22 i a oe CHES any 20% ss «ag 4 1 _ B: Base

7 C: Collector

3 E: Emitter

SANYO: TO126LP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters 4137KI/D176TA,TS No.2048-1/4

Continued from preceding page. min typ max unit B-E. Saturation Voltage _ V, Ip=(-)2A,Ip=(-)0.2A (-)0.9(-)1.2 Vv BE(sat) -C B: C-B Breakdown Voltage V(BR)CBO Igs(~)10pA, I,=0 (-)120 Vv C-E Breakdown Voltage Vepr)cgo Ic=(-) 1mA, Rpp=00 (-)100 v E-B Breakdown Voltage VBR) EBO Ty2(-) 10pA,Ip=0 (-)6 v Turn-on Time ton See specified Test Circuit. (100) ns ns Storage Time tstg " (300) ns 800 ns Fall Time te " (20) ns 50 ns Switching Time Test Circuit Duly Cycle 1% oad ure input 8 /P 30 ® w) Loh | sv Ig=10Lg1=-101p2=2h For PNP, the polarity is reversed. Unit (Resistance : 2, Capacitance : F) Ic - Vee Te = Vee “Tese1i68 TA (2587725 ipomn LS 7 nel | s Pils 1-9 0ma Le oe eer tyes Zsa ie = " ; 3 NG 2 | 60a 6 ob Sh [et mw Ze a Zeon E EERE oy nai OA} ee Ce ae: 8 | Ze 8 izeann pa |}

72 WY un Wea =

8 Yt) ta speal sweci eT TTT

En 2A [| 4 i eee ee 8 A ; Aen TT TT Taso TT] Collector-to-Emitter Voltage,Vog - V Collector-to-Enitter Voltage ,Vog - V “20 Ie - Vee 20, Ic - Vce Teer; eR ACE 1 ug So re + on SVescrrre Reto = ‘eee Fe § +13) IS 7 8 1a] aan = ee eee ees pe Seer ea a or a 8 ot ee SS Se oe 3 fe tei TT is ro Cri fee TTT ° POPC) ‘Collector-to-Emiiter Voltage, Vop - V ‘Collector-to-Emitter Voltage,Vop - V No. 2048-2/4 ;

; Ic - VBE Ic ~ Vee ‘ 2581168 ‘ [| 2801725 < VCE=-SV < VCE=SV ti. | v 4) 2 2 zk E 3 & & wy i (ea | Joona 3 3 6 “OR bE OE Ai, 102 5 Oz OF ar Au Tr) 12 Base-to-Emitter Voltage ,Vpp - V Base -to-Emitter Voltage,Vpp - V i a ai ao 2587168 or oor [. 3 Zspir25 SS eee | Pe £ Eee eee - & [Sore rarer 2 | eS SN J ott att | — 3 gr CoE ee ooo ge Geese NS 8 ero A 2] ii Bean e701 Ht gg FUL PTT TTT) og PT LE Re 7 oe a EA 0.01 “01 “1.0 -10 0.0 On 10 10 Collector Current ,Ig -A Collector Current I -A ny fi - Ic Sob - Ys. ‘TOT Ee + ote ero) WR 44 100) > Pee | PES Se Pope rat § Fee £ s: i 8 be 3 a | RS Ce || 37 mn F al eH Pi eco a Ln 4 3 0 [Tt TTT 3 o|_|(For PNP, minus sign 19 omitted.) © {| Gor PNP, minus sign is omitted.)| Cty 1D Collector Current,Ig - A Collector-to-Base Voltage, Vop oy a [| ee — 2881168 a 2801725 “hlseuh i SEE pees] revel} oe ee ee ge Does ge sP Ht AH 48 Ce HHH £3 oi Senne AGe a3 ot roo AA v CO eZ 8 oa poo Pe £ ae a

2 PPS fb RRS

8 =0.01 =on 7 10% mo SHS Oo PTS oy 2s S gp ZS S aq Collector Current ,I¢ =A Collector Current,Ig -A ci No. 2048-3/4

2SB1168/2SD1725 . ee > a0 Vpe(sat) - Ic > 10 VBE(sat) - Ic “CEES CT eres = 21

3 PPP apie yey diy ies

SRR ee : SOiSRRtRRiee Ft By J a = | [fir Py | eit tii yt it § F) 83-0) 8410 eo” —— eo — 2" ~ ee ee BF ee err | a3 J Err |_| a8 J Frere [Tl a LH ti ge Pty | HT os eed gitlb Pb Lo 0.01 -O0 70 10 0.01 ol 10 10 Collector Current,Ig - A Collector Current,Ig - A ASO Pe = Ta « oLter_] [ Ty] 2$81168/2s0 1725 = 28811687280 1725

1 ASS ated pase ’

° OS TS - 4

2 EES a LIN nae

2ST ERRE Tg. IN 5 - os Se SN = z | It | a POO ee Se RR ca IN . Po Ne ONY a Sottt Tt Tod oe} FA | Pee PTT Sr, co ee Yo neat sin _| NO . 8 {(For PNP, minus sign is omitted.) 8 a te eat, sink ZN 10 10 10 oO m+ 60 80 100 1200 49 160 Collector-to-Emitter Voltage, Vop - V Ambient Temperature,Ta ~ °C I No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. WM Anyone purchasing any products described or contained herein for an above-mentioned use shall: ©® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO.,, LTD., its affiliates, P| Pp 'y 'y * » 5 subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD,, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severaly Hi Information (including circuit diagrams and circuit parameters) herein is for exafple only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding ‘its use or any infringements of intellectual property rights or other rights of ng ty rig al third parties. No. 2048--4/4