2SB1145 SAVANTIC
Document overview
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- PDF pages: 3
Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1145
DESCRIPTION
- With TO-220F package
- High DC current gain.
- DARLINGTON
- Low collector saturation voltage
APPLICATIONS
- For high current driver and power driver applications PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector-emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -3 A ICM Collector current-peak -5 A TC=25 20 PC Collector dissipation Ta=25 2 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-220F) and symbol
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1145 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP . MAX UNIT V(BR)CBO Collector-base breakdown voltage I C=-100µA; IE=0 -120 V V(BR)CEO Collector-emitter breakdown voltage I C=-5mA; IB=0 -120 V VCEsat Collector-emitter saturation voltage I C=-1.5A ; IB=-3mA -1.5 V VBEsat Base-emitter saturation voltage I C=-1.5A ; IB=-3mA -2.0 V ICBO Collector cut-off current V CB=-120V;IE=0 -50 µA IEBO Emitter cut-off current V EB=-5V;IC=0 -3.0 mA hFE DC current gain I C=-1.5A ; VCE=-3V 2000
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1145 PACKAGE OUTLINE Fig.2 Outline dimensions