2SB1144 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

+ Adoption of FBET and MBIT processes. + High breakdown voltage + Low saturation voltage. - Plastic-covered heat sink facilitating high-density mounting. ( ):2SB1144 Absolute Maximum Ratings at Ta = 25°C unit Collector-to-Base Voltage Veso (—)120 Vv Collector-to-Emitter Voltage Voro (—)100 v Emitter-to-Base Voltage VEBO (-)6 Vv Collector Current Ic (-)L5 A Collector Current (Pulse) Icp (—)2.0 A Collector Dissipation Po 15 Ww Te=25°C 10 WwW Junction Temperature Tj 150 °C Storage Temperature Tstg —55 to +150 °C Electrical Characteristics at Ta = 25°C min typ max unit Collector Cutoff Current Iceso ~~ Vop=(~)100V, Ip=0 (-)100 nA Emitter Cutoff Current Ippo Vep=(—)4V, Ic=0 (—)100 nA DC Current Gain hpg(1) = Vog=(~)5V, Ic=(—)100mA 100K 400K hpg(2) Vog=(—)5V,I¢=(-)IA 30 Gain Bandwidth Product fy Vor=(—)10V, Ig=(—)50mA (100) MHz

120 MHz

Output Capacitance Cob Vop=(—)10V, f=1MHz (18) pF 11 pF C-E Saturation Voltage Voxisat) I¢=(—)500mA, Ip=(—)50mA (—180)(—500) mV 100 300 mV B-E Saturation Voltage Vaxisat) I¢=(—)500mA, Ip=(—)50mA (—)0.85(-)1.2 V C-B Breakdown Voltage Vesrcso Io=(—)10pA, Ig=0 (—)120 Vv C-E Breakdown Voltage Voeryceo Ic=(—)1mA, Rpp=°° (—)100 v E-B Breakdown Voltage Voerjeso Ig=(—)10pA, Ip=0 (-)6 Vv Continued on next page. %* : The 2SB1144/2SD1684 are classified by 100mA hp, as follows : 140 s 280 | 200 T 400 Switching Time Test Circuit Package Dimensions 2042B (unit : mm) Pws 2s 18) 11.0 15.5 17 Tileaiiia fe ws 7 3.0 > INPUT “ar AL PeFa 0 =e fd vR, 100 ete = > [149 so Fal bo pe (SY oe | ate af sl ag 3 -v Vv opens Ic= 10g; = —10Ig2=500mA 20: 1 Emitter Unit (Resistance : 2, Capacitance : F) 4 3: Base SANYO: TO126ML SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 10996TS (KOTO) 8-8500/4107KI/6106AT, TS No.2041-1/4

2$B1144/2SD1684 eee Continued from preceding page. min typ max unit Rise Time ton See specified Test Circuit. (80) ns Storage Time tatg i 780) ns Fall Time te a ao) he “a 50 ns “) SeBiiaa Bp 'S ospi684 oe" ae

7 SQ Ps ieee

Ceererlbal £ PeoCebe ta 2A ane Nee 262 eee 8 0-4 SEE Co ema 3° ama | [A Z2= nee ) A F Fe eo! ° Collecar-o-Emittor Voltage Ven -v Collecter-to-Emitter Voltage Veg -v ° “1 TI es ae or = <Nce 2SDi684 ARE eS KD j (fea: pee a er 3 3 a [ | | “ee “PRR ) -10 -20 -30 -40 50 oO 10 20 30 40 50 Collector-to-Emitter Voltage,Voe ~ V Collector-to-Emitter Voltage, Vop ~ V a. Ic — Vee Ic = Vee "Frege cev Seen Feet a <a, pe <1 ARE e Lt til Tyr) os Litt ae Ecce epee . LEE El Bil) ¢ Liye All [TI eeeeee, Ieee Pr eeeeeey: | aan P| Pit ii} cae oti li yy Tit) LTT ey Base-to-Emitter Voltage, Vaz — V Base-to-Emitter Voltage, Vag - V No.2041-2/4

oar) | Pa z HHonertsee tt 20 ete ——— Soot set SN || Og eee FRA NN Soll Pare are TT NN | | Sof 2 ids AN go ae 2 oe ea é | LENE) 3g Fe a 1 yt gi Pees ott tty TP EET Pe a Hite | BRE Collector Currently — A “Collector Current,Ig-A ww arr ro eos 2SB1144/2SD1684 2SB) /2SD: a CCPC TP ree=s0v {te TT aseiisaasoisss SU eg UNI BrP Tee] 6g JERS PET eee ee a : yh, ET g AR rN og, eee A Potties qe E efit ti A S 10 J} = ° ‘Abe PNP, minus sign i omitted —-]—t-|—-—| jIFOrPNP, minus sign is onitted, [ [| 0.01 ot 1.0 S710 10 100 Collector CurrentjIg — A Collector-to-Base Voltage, Vox — V TOO = Too . 3SR1144 rT [LITT] 2SD1684 a HAA cds a a ‘Sot tt TTT TT TT | oa TT -1000 F000 ge Jt TTT Ye) 2s Pt gs [Al |} #8 JI TTT TY Ey el ee LE ge 10 rd a eg rr Zon 28 a bts 25 Tne 6a | beer [TTT | 84 7 a aoe 7 cr Collector Current,[g ~ A Collector CurrentIg — A

40 Vee(sat) — Ic 10 eet

. eee) io > i a

5 Pe ee

3-3 | ay 2 pepe Td Stu TT it o iy pee TE AE ia | 305 SS TL Wd a8 a el ad Tee} a eer eee ae | Tt Ue

1001 Collector Currentg—A O01" Collector Currentg— A

No.2041-3/4

ASO hn Pc — Ta ee TTT 2sriaarspresa oA FREE alas LTT] Ne Fi NONE z <1 So, Lo aeney TT Vg RE 2 4 Pea ROE NO SL Re eT] g gz 3 os oN 3 {| NT BP Nee NAT gg Xf 24.1 [LIAR og Pp A por Nee EP IN E t— — Wo gf PTT NET

2 Coo V] 2: iS

3g | NEW Z yl

8 Ht NN eee

PITT TP rN (heating PT NT] 0.01 r= 25°C 03 et 5 0 ye eae o ptt S30 8 60 — 89 wD 760 1. 1 100 Collector-to-Emitter Voltage, Vey — V Ambient Temperature, Ta — °C I No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Mi Anyone purchasing any products described or contained herein for an above-mentioned use shall @® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Mi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production, SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 1996, Specifications and information herein are subject to change without notice, No.2041-4/4