2SB1144 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc ProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 isc SiliconPNPPowerTransistor 2SB1144
DESCRIPTION
- ·LowCollectorSaturationVoltage :VCE(sat)=-0.3V(Max)@IC=-0.5A
- WideArea ofSafeOperation
- ComplementtoType 2SD1684
APPLICATIONS
- Designedfor100V/1.5ASwitchingApplications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage -120 V VCEO Collector-EmitterVoltage -100 V VEBO Emitter-BaseVoltage -6 V IC CollectorCurrent-Continuous -1.5 A ICP CollectorCurrent-Pulse -2 A PC CollectorPowerDissipation @TC=25℃ 10 W CollectorPowerDissipation @Ta=25℃ 1.5 TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃
INCHANGE Semiconductor isc ProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 isc SiliconPNPPowerTransistor 2SB1144 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=-10mA;IB=0 -100 V V(BR)CBO Collector-BaseBreakdownVoltage IC=-10uA;IE=0 -120 V V(BR)EBO Emitter-BaseBreakdownVoltage IE=-10μA;IC=0 -6 V VCE(sat) Collector-EmitterSaturationVoltage IC=-500mA;IB=-50mA -0.3 V VBE(sat) Base-EmitterSaturationVoltage IC=-500mA;IB=-50mA -1.2 V ICBO CollectorCutoffCurrent VCB=-100V;IE=0 -0.1 μA IEBO EmitterCutoffCurrent VEB=-4V;IC=0 -0.1 μA hFE-1 DCCurrentGain IC=-0.1A;VCE=-5V 100 400 hFE-2 DCCurrentGain IC=-1A;VCE=-5V 30 fT Current-Gain—BandwidthProduct IC=-0.5A;VCE=-5V 120 MHz COB OutputCapacitance IE=0;VCB=-10V,ftest=1MHz 11 pF hFE -1Classifications Q S T 100-200 140-280 200-400