2SB1143

2SB1143S SANYO

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 7

Technical content

Features

• Adoption of FBET, MBIT processes • Low saturation voltage
• Large current capacity and wide ASO Specifi cations ( ): 2SB1143 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO (- -)60 V Collector-to-Emitter Voltage V CEO (- -)50 V Emitter-to-Base Voltage V EBO (- -)6 V Collector Current I C (- -)4 A Collector Current (Pulse) I CP (- -)6 A Collector Dissipation P C 1.5 W Tc=25°C1 0 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Package Dimensions unit : mm (typ) 7516A-002

90512 TKIM/O2003TN (KOTO)/92098HA (KT)/4137KI/D176TA, TS

http://www.sanyosemi.com/en/network/ Product & Package Information

• Package : TO-126ML
• JEITA, JEDEC : TO-126
• Minimum Packing Quantity : 200 pcs./bag Marking Electrical Connection 1 : Emitter 2 : Collector 3 : Base SANYO : TO-126ML 0.8 0.75 2.4 4.8 0.8 0.7 8.0 4.0 1.0 1.0 3.6 1.4 1.6 1.51.7 7.53.0 15.5 11.0 3.3 3.0 123 LOT No.RANK B1143 LOT No.RANK D1683 2SD1683 2SB1143 2SB1143S 2SB1143T 2SD1683S 2SD1683T 2SB1143/2SD1683 PNP/NPN Epitaxial Planar Silicon Transistor 50V/4A Switching

Applications

No.2063-2/7 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current I CBO VCB=(- -)40V, IE=0A (- -)1 μA Emitter Cutoff Current I EBO VEB=(- -)4V, IC=0A (- -)1 μA DC Current Gain hFE1V CE=(- -)2V, IC=(- -)100mA 100* 560* hFE2V CE=(- -)2V, IC=(- -)3A 40 Gain-Bandwidth Product f T VCE=(- -)10V, IC=(- -)50mA 150 MHz Output Capacitance Cob V CB=(- -)10V, f=1MHz (39)25 pF Collector-to-Emitter Saturation Voltage V CE(sat) I C=(- -)2A, IB=(- -)100mA (- -350)190 (- -700)500 mV Base-to-Emitter Saturation Voltage V BE(sat) I C=(- -)2A, IB=(- -)100mA (- -)0.94 (- -)1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC=(- -)10μA, IE=0A (- -)60 V Collector-to-Emitter Breakdown Voltage V (BR)CEO IC=(- -)1mA, RBE=∞ (- -)50 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=(- -)10μA, IC=0A (- -)6 V Turn-On Time t on See specifi ed Test Circuit. (70)70 ns Storage Time t stg (450)650 ns Fall Time t f (30)35 ns * : The 2SB1143/2SD1683 are classifi ed by 100mA hFE as follows : Rank R S T U hFE 100 to 200 140 to 280 200 to 400 280 to 560 Switching Time Test Circuit

Ordering Information

Device Package Shipping memo 2SB1143S TO-126ML 200pcs./bag Pb Free 2SB1143T TO-126ML 200pcs./bag 2SD1683S TO-126ML 200pcs./bag 2SD1683T TO-126ML 200pcs./bag IC=10IB1= --10IB2=1A (For PNP, the polarity is reversed.) VR RB VCC=25VVBE= --5V + + 50Ω INPUT OUTPUT RL 25Ω 100μF 470 μF PW=20μs IB1 D.C.≤1% IB2

No.2063-3/7 IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A IC -- VCE Collector-to-Emitter V oltage, VCE -- V IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Collector Current, IC -- A IC -- VBE Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A IC -- VBE Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A hFE -- IC Collector Current, IC -- A DC Current Gain, hFE hFE -- IC Collector Current, IC -- A DC Current Gain, hFE --5 --3 --2 --1 --4 IB=0mA ITR09047 2SB1143 --5mA --10mA --20mA --50mA --100mA --200mA IB=0mA ITR09048 2SD1683 5mA 10mA 20mA 80mA 60mA 40mA 100mA --4.8 --4.0 --3.2 --2.4 --1.6 --0.8 ITR09051 Ta=75 --25 2SB1143 VCE= --2V 4.8 4.0 3.2 2.4 1.6 0.8 ITR09052 Ta=75 --25 2SD1683 VCE=2V 1000 100 ITR09053 2SB1143 VCE= --2V Ta=75°C 25°C --25°C 1000 100 23 50.01 23 5 50.1 23777 1.0 ITR09054 Ta=75°C 25°C --25°C 2SD1683 VCE=2V --2.0 --1.2 --0.8 --0.4 --1.6 IB=0mA ITR09049 2SB1143 --2mA --4mA --6mA --8mA --14mA --12mA --10mA 2.0 1.2 0.8 0.4 1.6 048 2 0 1612 IB=0mA ITR09050 2SD1683 2mA 1mA 3mA 4mA 6mA 5mA 8mA 7mA

No.2063-4/7 VCE(sat) -- IC Collector Current, IC -- A VCE(sat) -- IC Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV fT -- IC Gain-Bandwidth Product, fT -- MHz Collector Current, IC -- A Cob -- VCB Output Capacitance, Cob -- pF Collector-to-Base V oltage, VCB -- V VBE(sat) -- IC Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE(sat) -- V VBE(sat) -- IC Base-to-Emitter Saturation V oltage, VBE(sat) -- V Collector Current, IC -- A A S O Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collector Dissipation, PC -- W Ambient Temperature, Ta -- °C PC -- Ta 23 50.1 10 23 50.01 23 5 7 7 7 1.0 100 1000 ITR09055 2SB1143 2SD1683 1.0 10 100 27 35 10027 35 ITR09056 2SB1143 / 2SD1683 VCE=10V 2SB1143 2SD1683 2SB1143 / 2SD1683 f=1MHz 1.0 0.1 1.0 10 25 7 33 10025 7 357 ITR09061 1.5 0 20 40 60 100 120 160 14080 ITR09062 No heat sink 2SB1143 / 2SD1683 --1.0 --10 ITR09059 2SB1143 IC / IB=20 25°C 75°C Ta= --25°C 1.0 0.1 23 5 7770.01 23 5 23 50.1 1.0 ITR09060 25°C 75°C Ta= --25°C 2SD1683 IC / IB=20 100ms 10ms1ms DC operation Tc=25 DC operation Ta=25 2SB1143 / 2SD1683 IC=4A ICP=6A --1000 --10 --100 ITR09057 2SB1143 IC / IB=20 75°C 25°C Ta= --25 1000 100 23 5 7770.01 23 5 3 50.1 21.0 ITR09058 25°C Ta=75°C --25°C 2SD1642 IC / IB=20 For PNP, the minus sign is omitted. For PNP, the minus sign is omitted. Tc=25°C Single pulse For PNP, the minus sign is omitted.

No.2063-5/7 Bag Packing Specifi cation 2SB1143S, 2SB1143T, 2SD1683S, 2SD1683T

No.2063-6/7 Outline Drawing 2SB1143S, 2SB1143T, 2SD1683S, 2SD1683T Mass (g) Unit 0.97 * For reference mm

PS No.2063-7/7 This catalog provides information as of September, 2012. Specifi cations and information herein are subject to change without notice. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.